多层PT/PZT薄膜的结构特性研究  

Study on Structure Properties of PZT/PT Multilayered Thin Films

作　　者：郑俊华[1,2] 谭秋林[1,2] 唐力程 

机构地区：[1]中北大学电子测试技术国家重点实验室,山西太原030051 [2]中北大学仪器科学与动态测试教育部重点实验室,山西太原030051

出　　处：《压电与声光》2015年第6期1034-1036,1042,共4页Piezoelectrics & Acoustooptics

基　　金：国家自然科学基金资助项目(51205373)

摘　　要：通过溶胶-凝胶(Sol-Gel)法在Pt/Ti/SiO_2/Si基底上制备了多层PT/PZT(PbTiO_3/Pb(Zr_(0.52)Ti_(0.48))O_3)薄膜,研究了不同退火时间对其纳米结构、结晶性能及相变特性的影响。利用FESEM测试了不同退火时间对薄膜纳米结构的影响,选用XRD与Raman分析了薄膜的结晶取向及相变特点。实验结果表明,随着退火时间的增加,薄膜的三方相向四方相转变,并具有(110)择优取向。退火时间为20min是PZT薄膜的最佳退火时间,此时薄膜的结晶效果良好、晶粒大小均匀、具有纯钙钛矿结构,此种结构的薄膜有望应用于MEMS器件中。The PT/PZT（PbTiO3/Pb（Zr0.52Ti0.48）O3）multilayered thin films deposited on Pt/Ti/SiO2/Si substrates is prepared by Sol-Gel method.The influence of different annealing time on the nanostructure,crystal orientation and phase change characteristics is analyzed.The influence of different annealing time on nanostructure using FESEM and on the crystal orientation and phase change characteristics using XRD and Raman are measured separately.The test result reveals that at elevated annealing time,the thin film will transform from trigonal phase into tetragonal phase,and have a preferred orientation of（110）.The optimized annealing time is found to be 20 min,at which the thin film possesses perfect crystallization,uniform grain size and pure perovskite phase.It is expected that this kind of thin film can be used in MEMS devices.

关 键 词：多层PT/PZT薄膜 压电材料 溶胶-凝胶法 钙钛矿结构 退火时间 

分 类 号：TM282[一般工业技术—材料科学与工程] TF123[电气工程—电工理论与新技术]