基于InGaAs/InP雪崩光电二极管的高速单光子探测器雪崩特性研究（英文）  

Avalanche characterization of high speed single-photon detector based on InGaAs/InP APD

作　　者：李永富[1] 刘俊良[1,2] 王青圃[1] 方家熊[1] 

机构地区：[1]山东大学光学高等研究中心,山东济南250100 [2]山东大学信息科学与工程学院,山东济南250100

出　　处：《红外与毫米波学报》2015年第4期427-431,共5页Journal of Infrared and Millimeter Waves

基　　金：Supported by Independent Innovation Foundation of Shandong University(2014YE015)

摘　　要：报道了一种基于InGaAs/InP雪崩光电二极管、1.25GHz正弦波门控及贝塞尔低通滤波器的1.25GHz高速短波红外单光子探测器.通过调整比较电路的鉴别电平,实验研究了单光子探测器雪崩信号幅度随反向直流偏压的变化.随着鉴别电平的提高,单光子探测器的探测效率及暗计数率均呈指数衰减,而后脉冲概率先增大到一个峰值,然后减小.研究表明,为获得更高的性能,需要尽量降低单光子探测器的鉴别电平.A 1. 25-GHz high speed short-wavelength infrared single-photon detector（ SPD） based on In Ga As / In P avalanche photodiode（ APD） 1. 25-GHz sine wave gating and Bessel LC low-pass filters（ LPFs） was described.The avalanche signal amplitude distributions of the SPD at different reverse DC biases are studied experimentally by adjusting the discrimination level of the comparator circuit. As the discrimination level is raised,both detection efficiency and dark count rate reduce exponentially,while the after-pulse probability firstly rises to a peak value and then reduces. It indicates that the discrimination level should be as lowas possible to obtain better SPD performance.

关 键 词：InGaAs/InP雪崩光电二极管 单光子探测器 短波红外 

分 类 号：TN215[电子电信—物理电子学]