PI柔性衬底上Ga掺杂ZnO透明导电薄膜的常温制备及特性研究  

Deposition and Characterization of Ga-Doped ZnO Coatings on Polyimide Flexible substrates

作　　者：车丙晨 朱超挺[2] 谭瑞琴[1] 李佳[2] 黄琦金[2] 宋伟杰[2] 

机构地区：[1]宁波大学信息科学与工程学院,宁波315211 [2]中国科学院宁波材料技术与工程研究所,宁波315201

出　　处：《真空科学与技术学报》2015年第12期1507-1512,共6页Chinese Journal of Vacuum Science and Technology

基　　金：国家自然科学基金项目(21377063);宁波大学王宽诚幸福基金

摘　　要：采用射频(RF)磁控溅射技术在室温条件下制备了基于柔性PI衬底上不同氧化镓(Ga_2O_3)掺杂浓度的ZnO(GZO)薄膜。研究发现,在Ga_2O_3掺杂浓度为5%(质量比)情况下,制备的GZO薄膜具有最优化的光电特性,其对应电阻率为5.85×10^(-4)Ω·cm,Hall迁移率为14.6 cm^2·V^(-1)·s^(-1),载流子浓度为7.33×1020cm^(-3),可见光区平均透过率为86.5%。经过1000次弯折测试后,垂直于折痕方向的电阻明显增大,而平行于折痕方向的电阻变化相对较小。基于以上结果,可以得出所制备的GZO薄膜具备优异的光电特性,有望应用于各种柔性光电设备。The Ga-doped ZnO（ GZO） coatings were synthesized at room temperature by RF magnetron sputtering of a lab-made GZO target on flexible polyimide（ PI） substrate. The impact of the Ga2O3-content on the properties of GZO coatings was investigated with X-ray diffraction,scanning electron microscopy,Hall effect measurement,and ultraviolet visible near infrared spectroscopy,etc. The results show that the Ga2O3-content significantly affects the properties of GZO coatings. For example,as the Ga2O3-content increased,the resistivity changed in a decreaseincrease mode,accompanied by an increase-decrease variation in electron concentration. Grown at 5%（ wt） Ga2O3,the GZO coating has the lowest resistivity of 5. 85 × 10^-4Ω·cm,and the corresponding electron mobility,carrier concentration and transmittance were 14. 6 cm^2·V^-1·s^- 1,7. 33 × 10^20cm^-3 and 86. 5%,respectively. In addition,we found that expansion（ contraction） of the GZO coating increased（ decreased） the sheet resistance.

关 键 词：GZO薄膜 射频磁控溅射 光电特性 PI柔性衬底 

分 类 号：O484.1[理学—固体物理]