钛掺杂对Ge_2Sb_2Te_5薄膜相变特性的改善（英文）  

Improvement of phase change behavior in titanium-doped Ge_2Sb_2Te_5 films

作　　者：张颖[1] 魏慎金[1] 易歆雨 程帅[1] 陈坤[1] 朱焕锋[1] 李晶[1,2,3] 吕磊[4] 

机构地区：[1]复旦大学光科学与工程系,上海200433 [2]上海超精密光学制造工程技术研究中心,上海200433 [3]复旦大学(教育部)微纳光子结构重点实验室,上海200433 [4]潍坊医学院医学物理系,山东潍坊261053

出　　处：《红外与毫米波学报》2015年第6期658-662,共5页Journal of Infrared and Millimeter Waves

基　　金：Supported by Natural Science Foundation of Shanghai(13ZR1402600);National Natural Science Foundation of China(60578047);the National"973"Program of China(2012CB934303,2009CB929201);Shanghai Commission of Science and Technology(06DJ14007);National"02"Project of China(2011ZX02402);Natural Science Foundation of Shandong Province(2011ZRFL019)

摘　　要：利用椭偏光谱术与XRD对钛掺杂Ge_2Sb_2Te_5薄膜中钛元素对体系的光学性质及其微结构的影响进行了实验研究.进而对该薄膜进行变温阻抗实验表明,钛掺杂Ge_2Sb_2Te_5薄膜与未掺杂的薄膜相比具有更好的热稳定性.基于对薄膜样品的数据保持能力测试的实验数据,经阿伦纽斯外推处理可知,钛掺杂Ge_2Sb_2Te_5薄膜样品的10年数据保持温度要高于未掺杂Ge_2Sb_2Te_5薄膜样品.本文的实验结果均证实,钛掺杂Ge_2Sb_2Te_5薄膜更适合应用于相变随机存取存储器中.The influence of Ti dopant in the titanium-doped Ge_2Sb_2Te_5 film upon its optical and structural characteristics has been investigated by spectroscopic ellipsometry and x-ray diffraction. Temperature-dependent resistance tests have further revealed that Ti-doped Ge_2Sb_2Te_5 films have better thermal stability than undoped one. Based on the Arrhenius extrapolation results from data retention tests,the endurance temperature corresponding to 10-year data retention of a Ti-doped Ge_2Sb_2Te_5 cell is higher than that of a common Ge_2Sb_2Te_5 cell without dopant. All these experimental results have confirmed that the Ti-doped Ge_2Sb_2Te_5 films are more suitable for the application in phase-change random access memory.

关 键 词：钛掺杂Ge2Sb2Te5薄膜 相变特性 热稳定性 数据保持能力 

分 类 号：O484[理学—固体物理]