Fabrication of superconducting NbN meander nanowires by nano-imprint lithography  

作　　者：杨美 刘丽华 宁鲁慧 金贻荣 邓辉 李洁 李阳 郑东宁 

机构地区：[1]Department of Physics,School of Mathematics and Physics,University of Science and Technology Beijing,Beijing 100083,China [2]Institute of Physics,Chinese Academy of Sciences,Beijing 1 O0190,China

出　　处：《Chinese Physics B》2016年第1期384-389,共6页中国物理B（英文版）

基　　金：supported by the National Basic Research Program of China(Grant Nos.2011CBA00106 and 2009CB929102);the National Natural Science Foundation of China(Grant Nos.11104333 and 10974243)

摘　　要：Superconducting nanowire single photon detector （SNSPD）, as a new type of superconducting single photon detector （SPD）, has a broad application prospect in quantum communication and other fields. In order to prepare SNSPD with high performance, it is necessary to fabricate a large area of uniform meander nanowires, which is the core of the SNSPD. In this paper, we demonstrate a process of patterning ultra-thin NbN films into meander-type nanowires by using the nano- imprint technology. In this process, a combination of hot embossing nano-imprint lithography （HE-NIL） and ultraviolet nano-imprint lithography （UV-NIL） is used to transfer the meander nanowire structure from the NIL Si hard mold to the NbN film. We have successfully obtained a NbN nanowire device with uniform line width. The critical temperature （Tc） of the superconducting NbN meander nanowires is about 5 K and the critical current （lc） is about 3.5 μA at 2.5 K.Superconducting nanowire single photon detector （SNSPD）, as a new type of superconducting single photon detector （SPD）, has a broad application prospect in quantum communication and other fields. In order to prepare SNSPD with high performance, it is necessary to fabricate a large area of uniform meander nanowires, which is the core of the SNSPD. In this paper, we demonstrate a process of patterning ultra-thin NbN films into meander-type nanowires by using the nano- imprint technology. In this process, a combination of hot embossing nano-imprint lithography （HE-NIL） and ultraviolet nano-imprint lithography （UV-NIL） is used to transfer the meander nanowire structure from the NIL Si hard mold to the NbN film. We have successfully obtained a NbN nanowire device with uniform line width. The critical temperature （Tc） of the superconducting NbN meander nanowires is about 5 K and the critical current （lc） is about 3.5 μA at 2.5 K.

关 键 词：nano-imprint lithography meander nanowires ultra-thin NbN films 

分 类 号：TN305.7[电子电信—物理电子学] TB383.1[一般工业技术—材料科学与工程]