激光烧蚀法制备半导体纳米丝的研究进展  

Progress of Semiconductor Nanowires Synthesized by Laser Ablation

作　　者：吴旭峰[1] 凌一鸣[1] 

机构地区：[1]东南大学电子工程系,江苏南京210096

出　　处：《激光与红外》2002年第2期67-69,共3页Laser & Infrared

摘　　要：简要介绍了当前国内外激光烧蚀法制备半导体纳米丝的研究现状。介绍了目前激光烧蚀法制备的实验装置及所采用的激光束参数。比较了不同实验结果中在纳米丝结构和生长方向等方面的差异 ,并分析了半导体纳米丝生长的VLS金属催化机理和氧化物辅助生长模型 ,我们认为Si 金属混合物作靶时金属催化作用对纳米丝的生长起主要作用 ,而在Si -氧化物混合物作靶时 。the current status of semiconductor nanowires synthesized by laser ablation is simply presented. Experimental setup and laser parameters are discussed. The difference of nanowire microstructure and growth direction in different experiment results are compared. Then we analyse VLS metal catalysis model and oxide assisted mechanism of nanowire growth. We consider that,during laser ablating,if the target is the mixture of silicon and metal,VLS metal catalysis plays the main role for nanowires growth,and if the target is the mixture of silicon and silicon dioxide,nanowires formation is chiefly caused by oxide assisted mechanism.

关 键 词：激光烧蚀 半导体 纳米丝 激光束参数 VLS金属催化机理 

分 类 号：TB383[一般工业技术—材料科学与工程] TN205[电子电信—物理电子学]