高稳定度低相位噪声温补晶振芯片设计  

Design of the Chip of Temperature-Compensated Crystal Oscillator with High-Stability and Low Phase Noise

作　　者：黎荣林 黎敏强 

机构地区：[1]河北博威集成电路有限公司,石家庄050200

出　　处：《半导体技术》2016年第1期32-36,共5页Semiconductor Technology

摘　　要：设计了一种满足三级钟标准的高稳定度、低相位噪声温补晶体振荡器（TCXO）集成电路芯片。芯片由电压基准电路、压控晶体振荡电路、温度补偿电压产生电路和缓冲电路等模块组成,只需外接石英晶体谐振器和滤波电容便可构成精密的TCXO。温度补偿电压产生电路输出的电压,随温度变化,满足精确的5次多项式函数特征,使得-40~85℃温度内温补晶振输出的频率温度稳定度优于±0.2×10-6;振荡电路采用了低相位噪声设计技术,使19.99 MHz温补晶振的相位噪声优于-142 d Bc/Hz@1 k Hz。芯片采用0.5μm CMOS工艺制造,面积为2.0 mm×2.0 mm,功耗低于15 m W。A high-stability and low-phase noise temperature-compensated crystal oscillator（ TCXO）integrated circuit chip which satisfied the standard of third-level clock source was designed. The chip was composed of reference voltage circuit,voltage controlled crystal oscillation circuit,temperature compensated voltage generating circuit and buffer circuit and so on. To make a precise TCXO,it just needs to connect the crystal resonator and filtering capacitance outside the chip. The output voltage of temperature compensated voltage generating circuit was changed following the temperature change,and it is operating as a function of precision 5^th order polynomial,so that the frequency temperature stability of the TCXO was better than ± 0. 2 × 10^- 6at the temperature range of- 40- 85 ℃. With the low phase noise design technology of the crystal oscillation circuit,the phase noise of the 19. 99 MHz TCXO was better than- 142 d Bc / Hz @ 1 k Hz. The chip was fabricated using 0. 5 μm CMOS technology,and its size was 2 mm × 2 mm,and the power dissipation was lower than 15 m W.

关 键 词：温补晶体振荡器(TCXO) 集成电路芯片 频率温度稳定度 相位噪声 互补金属氧化物半导体(CMOS)工艺 

分 类 号：TN752[电子电信—电路与系统] TN432