可控合成具有Cl_2气敏性能的不同形貌ZnO  

Controlled Synthesis of Zinc Oxide Particles with Different Morphologies and their Cl_2Gas-sensing Properties

作　　者：李彩珠[1] 赵晓华[1] 李珍珍[1] 武广利[1] 娄向东[1] 徐莎[1] 

机构地区：[1]河南师范大学化学化工学院,河南新乡453007

出　　处：《硅酸盐学报》2016年第1期159-165,共7页Journal of The Chinese Ceramic Society

基　　金：国家自然科学基金(No.21073055)

摘　　要：采用水热法,通过改变溶液pH值,可控合成了具有Cl_2气敏性能的不同形貌ZnO。利用X射线衍射、扫描电子显微镜、透射电子显微镜、比表面积测试、光致发光光谱对不同形貌的ZnO样品进行表征,分析了不同形貌ZnO的形成机理。采用静态配气法对其气敏性能进行测试,且从比表面积、表面氧缺陷等角度分析了不同形貌ZnO与其Cl_2气敏性能之间的关系。结果表明:与pH值为11或12时得到的圆片状或汉堡状的ZnO相比,pH值为14或13时得到的棒花状或片花状ZnO对Cl_2具有更好的气敏性能。棒花状或片花状ZnO可在较宽的体积浓度范围(1~3000)×10^(-6)内对Cl_2进行检测,且响应和恢复时间短:对体积浓度为100×10^(-6)的Cl_2,其响应时间分别为3和2 s,恢复时间分别为68和69 s。另外,2种花状ZnO对Cl_2有很好的选择性,且40 d的稳定性测试表明,其对Cl_2敏感特性基本保持不变。Zinc oxide （ZnO） particles with different morphologies were synthesized by a one-pot hydrothermal method at various pH values. The as-prepared samples were characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, specific surface area measurement and photoluminescence measurement, respectively. The formation mechanisms of ZnO with different morphologies were proposed. The gas-sensing properties of ZnO were evaluated via a static volumetric method. Moreover, the relationship between gas-sensing properties of ZnO and specific surface area and oxygen vacancy was also discussed. The results show that the sensors with either the nanorods flower-like ZnO （when pH=14） or the nanosheets flower-like ZnO （when pH=13） exhibit a higher response to C12 than the disk-like （when pH=l 1） or hamburg-like（pH=12） ZnO. The nanorods flower-like ZnO or the nanosheets flower-like ZnO can detect C12 in a wide concentration range （1-3000 × 10-6）for the short response and recovery time. The response time is only 2-3 s and the recovery time is only 68-69 s for 100×10-6 C12, respectively. Also, the flower-like ZnO sensors show a superior selectivity to C12. After 40 d, the gas-sensing properties of the flower-like ZnO （when pH=14 or 13） are still stable.

关 键 词：气敏 氯气 氧化锌 可控合成 形貌 

分 类 号：O649[理学—物理化学]