针对场截止型功率器件的多重质子注入研究  

Study of Multiple Proton Implantations into Silicon for Field-stop Power Devices

作　　者：王思亮[1] 胡强[1] 张世勇[1] 蒋兴莉[1] 樱井建弥 

机构地区：[1]东方电气集团中央研究院,成都611731 [2]东方电气集团江苏华创光电科技有限公司,江苏宜兴214213

出　　处：《东方电气评论》2015年第4期11-15,共5页Dongfang Electric Review

摘　　要：针对场截止型功率器件的开发,进行了质子在硅中多重注入的关键工艺研究。质子注入后经过400℃的退火激活,在硅衬底中形成了n型掺杂。当注入能量分别为0.5 MeV、0.8 MeV和1.15 MeV时,对应的浓度峰值位置分别集中在6.0μm、11.5μm和19.6μm附近。对注入后的载流子浓度分布进行拟合,发现单次注入的杂质分布近似于高斯分布函数。通过对比,发现质子注入后的载流子浓度分布接近英飞凌IGBT的场截止层浓度分布。本研究为下一步确定场截止型器件的工艺条件提供了重要的参考。Multiple proton implantations into silicon have been studied for field-stop power devices. Proton implantations and annealing at 400 ℃ resulted in n-doped zones. When multiple implantation energies are 0. 5 MeV, 0. 8 MeV and 1. 15 MeV, the peak depth of carrier concentrations are correspondingly around 6. 0 μm, 11. 5 μm and 19. 6 μm. Fitting curves of the doping profile by each single implantation appear approximately to Gaussian distribution. It is revealed that carrier concentrations of double-peak profile by proton implantations are much close to that of Infineon IGBTs＇ field stop layers. The results of the investigation provide an important reference for the determination of device process conditions.

关 键 词：质子注入 功率器件 场截止 

分 类 号：TN305.3[电子电信—物理电子学]