3DG81B在静电放电作用下损伤效应与机理分析  

Damage Effect and Mechanism Analysis of 3DG81B Induced by Electrostatic Discharge

作　　者：马立云[1] 谭志良[1] 宋培姣[1] 吴东岩 

机构地区：[1]军械工程学院电磁环境效应重点实验室 [2]沈阳军区第65153部队

出　　处：《高电压技术》2015年第12期4191-4197,共7页High Voltage Engineering

基　　金：国家自然科学基金(51277179);军械工程学院科研基金(YJJXM12052)~~

摘　　要：为研究高频低功率双极型晶体管在静电放电电磁脉冲下的损伤机理,分别采用静电放电试验法、软件仿真法以及微观失效分析法,对高频低功率双极型晶体管3DG81B进行静电放电试验,建立双极型晶体管的仿真模型,分别模拟静电放电电磁脉冲从EB结和CB结注入的整个过程,并通过微观分析来分析其失效机理。结果验证了高频低功率双极型晶体管对静电放电电磁脉冲的最敏感端对为CB结;同时还发现该类晶体管的损伤是由热二次击穿导致的热致损伤,最终导致晶体管局部区域发生融化而损坏,其损伤时的失效模式表现为电参数漂移、短路以及功能性失效。In order to study the damage mechanism of bipolar junction transistor （BJT） under the electrostatic discharge （ESD） electromagnetic pulse, we used three methods, such as systematic ESD injection experiments, simulation, and mi- croanalysis, to carry out the systematic ESD injection experiments on the high-frequency low-power BJTs. We established a simulation model of BJT, simulated the process of ESD injection from EB and CB, respectively, and analyzed its failure mechanism b3 microanalysis. The results show that the most sensitive port of high-frequency low-power BJTs to ESD is CB junction. Meanwhile, its damage mechanism is the thermal damage caused by thermal secondary breakdown, which results in localized melting of the transistor region. The failure modes of transistor are electrical parameter drift, short-circuit and functional failure.

关 键 词：双极型晶体管 静电放电 损伤机理 敏感端对 微观分析 热二次击穿 

分 类 号：TN322.8[电子电信—物理电子学]