Linear variable filters fabricated by ion beam etching with triangle-shaped mask and normal film coating technique  被引量:4

Linear variable filters fabricated by ion beam etching with triangle-shaped mask and normal film coating technique

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作  者:盛斌 陈鹏 陶春先 洪瑞金 黄元申 张大伟 

机构地区:[1]Engineering Research Center of Optical Instruments and Systems,Ministry of Education and Shanghai Key Laboratory of Modern Optical Systems,University of Shanghai for Science and Technology

出  处:《Chinese Optics Letters》2015年第12期71-74,共4页中国光学快报(英文版)

基  金:partially supported by the National Natural Science Foundation of China(Nos.61378060,61205156,and 11105149);the Innovation Program of the Shanghai Municipal Education Commission(No.14YZ095)

摘  要:In this Letter, we propose a method of fabricating linear variable filters by ion beam etching with masking mechanisms. A triangle-shaped mask is designed and set between the ion source and sample. During the ion etching,the sample is moved back and forth repeatedly with a constant velocity for the purpose of obtaining the linearly varied thickness of the cavity. Combined with ion beam assistant thermal oxidative electron beam evaporation deposition technology, we finish the fabrication of linear variable filters, whose filtering range is from 500 to 580 nm. The measured results indicate that the transmittance and bandwidth at the peak wavelength are around 40% and 3 nm.In this Letter, we propose a method of fabricating linear variable filters by ion beam etching with masking mechanisms. A triangle-shaped mask is designed and set between the ion source and sample. During the ion etching,the sample is moved back and forth repeatedly with a constant velocity for the purpose of obtaining the linearly varied thickness of the cavity. Combined with ion beam assistant thermal oxidative electron beam evaporation deposition technology, we finish the fabrication of linear variable filters, whose filtering range is from 500 to 580 nm. The measured results indicate that the transmittance and bandwidth at the peak wavelength are around 40% and 3 nm.

关 键 词:ETCHING Ion sources 

分 类 号:TN305.7[电子电信—物理电子学]

 

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