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作 者:简勋[1] 张希军[1] 杨洁[1] 王书平[1] 刘丽珍
机构地区:[1]军械工程学院静电与电磁防护研究所,河北石家庄050003 [2]总装驻石家庄地区军代室,河北石家庄052165
出 处:《军械工程学院学报》2015年第6期28-34,共7页Journal of Ordnance Engineering College
基 金:国防科技重点实验室基金(9140C87010213JB34005);装备预研共用技术基金(9140A33010314JB34467)
摘 要:为了研究小电流晶闸管dV/dt触发导通的特性,选取A型引信起爆电路采用的2N5061型小电流晶闸管作为研究对象,对小电流晶闸管dV/dt触发导通机理进行分析,开展了小电流晶闸管电磁脉冲注入试验.研究结果表明:dV/dt触发的导通时间仅与晶闸管本身结构材料特性以及阳极电压峰值有关;dV/dt触发条件下,当阳极电压峰值一定时,晶闸管导通时间也是一定的;如果注入脉宽低于晶闸管在该电压下dV/dt触发时的导通时间,晶闸管将无法导通;晶闸管dV/dt触发导通时需要的阳极电压比较小,远低于其阴阳极间的断态重复峰值电压.In order to get the dV/dt triggering breakover characteristics of small current thyristor, 2N5061 thyristor which is used in Model A fuze detonating circuit is taken as the research object. By the analysis of dV/dt trigger's mechanism and EMP injection test, the results show that= the breakover time of SCR triggered by dV/dt is only related to the structure and material properties of itself as well as the anode voltage; the breakover time of the same type of thyristor is a fixed value under the same anode voltage; if the injection pulse width is shorter than the breakover time, the conduction of thyristor cannot be realized; the anode voltage when thyristor conduction is dV/dtt triggered is much samller than the thyristor's repetitive peak off-state voltage.
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