阳极电解制备n型多孔硅及光反射特性的影响研究  

Preparation of N-type Porous Silicon and Its Light Reflectivity Characteristics by Anodic Electrolysis

作　　者：孙羽涵[1] 赵景勇 钟宜霏 何梦娇[1] 孙艳[2] 闫康平[1] 

机构地区：[1]四川大学化学工程学院,四川成都610065 [2]成都大学机械工程学院,四川成都610106

出　　处：《成都大学学报（自然科学版）》2015年第4期399-403,共5页Journal of Chengdu University（Natural Science Edition）

摘　　要：采用双槽电化学阳极蚀刻法制备了n型多孔硅,并用带积分球的光度分光计测试了多孔硅的光反射率.研究了蚀刻电流密度、蚀刻时间和HF浓度等对多孔硅孔隙率和反射率的影响规律.结果表明:随着电流密度和蚀刻时间的增加,多孔硅表观孔隙率增加;多孔层的存在能显著降低反射率,且较小的电流密度和蚀刻时间,更有利于反射率降低;电流密度10 m A·cm-2制备的多孔硅平均反射率降低到9%,蚀刻时间10 min下制备的多孔硅平均反射率降至5%;HF浓度对反射率的影响不大.N-type porous silicon is prepared by electrochemical anodic oxidation etching method in a double tank cell and its light reflectivity is tested by Uv-vis spectrophotometry. The effects of current density,etching time and HF concentration on porosity and light reflectivity of porous silicon are investigated. The result shows that the apparent porosity increases when the current density and the etching time increase; the existence of porous layers can significantly reduce reflectivity,and meanwhile,the thinner the current density is and the shorter the etching time is,the lower the reflectivity is. The average reflectivity of porous silicon prepared with current density of 10 m A·cm- 2is reduced to 9%,and the average reflectivity of porous silicon prepared is reduced to 5% when the etching time is 10 min; HF concentration makes no difference to its reflectivity.

关 键 词：阳极氧化 n型多孔硅 反射率 

分 类 号：O482.31[理学—固体物理] TN304.12[理学—物理]