强太赫兹激光作用下量子阱中载流子量子态的变化特征  

The Variations Characteristics of Carrier Quantum States in Quantum Well in the Presence of Intense Terahertz Laser Fields

作　　者：王伟杨 吴波[1] 常山[1] 吕岿[1] 许磊[1] 

机构地区：[1]上饶师范学院物理与电子信息学院,江西上饶334001

出　　处：《上饶师范学院学报》2015年第6期33-40,共8页Journal of Shangrao Normal University

基　　金：国家自然科学基金(11404214;1455015);江西省教育厅基金(KJLD12046;GJJ13707);上饶师院基金(201411)

摘　　要：利用Kramers-Henneberger平移变换法和分析转移矩阵方法,研究了强太赫兹激光作用下有限深矩形量子阱体系载流子量子态的变化特征。结果表明,电子能级和量子态(或积分几率)随电场强度的增大或辐射频率的减小而增大,势阱宽度越小量子态和电子能级受辐射场的影响越显著。当电场强度逐渐增大或辐射频率逐渐减小,单势阱量子阱将先转变成双势阱量子阱,然后转变成半导体体材料。最后,讨论了量子态变化特征的物理本质。Within the Kramers--Henneberger translation transformation and the analytical transfer matrix mclhods, the variations characteristics of carrier quantum states is analyzed theoretically in a finite rectangular quantum well un- der intense terahertz laser fields. The results show that the electronic energy levels and quantum states（or integrated probability） increase with increasing radiation intensity or decreasing radiation frequency gradually, the effects of radi- alton field on these quantum states are more significance at smaller width of potential well. When the radiation be- comes intense or the radiaiton frequency becomes lows firstly the single quantum well potential transits into double quantum well potential, and then such double quantum well transits into semiconductor. Finally, the physical reasons behind these finding are discussed.

关 键 词：强太赫兹激光 量子态 量子阱 分析转移矩阵方法 激光缀饰势 

分 类 号：O482.3[理学—固体物理]