化学浴法制备ZnO纳米棒及其染料敏化太阳能电池性能  

ZnO Nanorods Fabricated by Chemical Bath Deposition Method and the Performance of their Dye-Sensitized Solar Cells

作　　者：王艳香[1] 李晶[1] 范学运[1] 杨志胜[1] 黄丽群[1] 李家科[1] 孙健[1] 

机构地区：[1]景德镇陶瓷学院,江西景德镇333403

出　　处：《陶瓷学报》2015年第6期601-609,共9页Journal of Ceramics

基　　金：国际科技合作专项(2013DFA51000);国家自然科学基金(51102122);江西省对外科技合作项目(20122BDH80003)

摘　　要：采用了化学浴沉积法制备了ZnO纳米棒,并将得到的ZnO纳米棒作为光阳极用于DSSC中。主要研究了导电玻璃在反应液中放置方式、生长液的浓度和Al^(3+)掺杂种子层等对所形成的ZnO纳米棒及染料敏化太阳能电池的影响。研究结果表明:当导电玻璃长边垂直放置于生长液中,生长液浓度为0.02 M,Al^(3+)掺杂量为9wt.%%时,所得的ZnO纳米棒长度为5μm,其组装成的DSSC的光电转换率为1.07%,短路电流为5.64 m A/cm^2,开路电压0.40V,填充因子0.47。In this paper,Al^3＋ doped ZnO nanorods were prepared by chemical bath deposition method and were used in the DSSCs as the photoanode. The effect of the placement of FTO,concentration of growth solution and doping amount of Al^3＋ in seed layer on ZnO nanorods and DSSCs performance were investigated. The optimum preparation conditions were as following：the long side of FTO is placed in a vertical position in growth solution,and the concentration of growth solution and the doping amount of Al^3＋ in seed layer is 0.02 M and 9%,respectively. Under the optimum preparation conditions,the length of ZnO nanorods was 5 μm and the photoelectric conversion,the short circuit current,open circuit voltage and fill factor of the DSSC were 1.07%,5.64 m A/cm^2,0.40 V and 0.47,respectively.

关 键 词：染料敏化太阳能电池 ZNO纳米棒 Al3+掺杂 光电性能 

分 类 号：TQ174.75[化学工程—陶瓷工业]