GaN基LED光电器件的垒层研究与设计  

Study and Design of High Efficiency Ga N Based LED Optoelectronic Device

作　　者：姚惠林[1] 宋丽君[1] 路纲[1] 陈朝辉[1] 王波[1] 

机构地区：[1]洛阳理工学院电气工程与自动化学院,洛阳471023

出　　处：《电子器件》2015年第6期1232-1235,共4页Chinese Journal of Electron Devices

基　　金：河南省教育厅高等学校重点科研项目(15A510033)

摘　　要：为了提高Ga N基LED的发光效率,缓解LED在大电流注入下的效率下降的问题,我们采用在传统的u型Ga N垒层中插入7 nm的P型层的方法来改善多量子阱层中的空穴分布,提高载流子的辐射复合速率。实验结果表明:在垒层中插入7 nm的P型层使得LED中空穴的分布更加均匀,载流子的辐射复合速率提高了20%。同时器件在200 m A的注入电流下内量子效率提高了36.3%,发光功率从100 m W提高到140 m W。In order to increase the luminous efficiency of GaN-based light emitting diodes and alleviate the efficien-cy droop under large current injection,we inserted a 7 nm P-type layer into the conventional GaN barriers. The ex-periment results show that the hole distributions were more uniform in the newly designed,and radiative recombina-tions were improved by 20% in the newly designed structures. Under 200 mA current injection,the internal quan-tum efficiency was improved by 36.3% and the light output power was increased by 40 mW.

关 键 词：LED 发光效率 P型层 空穴分布 辐射复合速率 

分 类 号：O437[机械工程—光学工程] TN364[理学—光学]