籽晶粒径分布对高效多晶硅晶体生长的影响  

Influence of Particle Size Distribution of Seeds on the Crystal Growth of High-performance Multi-crystalline Silicon

作　　者：戚凤鸣 张兆玉 钟根香[2,3] 周绪成 黄新明[1,2] 

机构地区：[1]南京工业大学材料学院,南京210009 [2]东海晶澳太阳能科技有限公司,连云港222300 [3]西安交通大学能源与动力学院,西安710049

出　　处：《材料导报》2015年第24期54-58,共5页Materials Reports

基　　金：国家重点基础研究发展计划(973计划)(2009CB623100);江苏省普通高校研究生科研创新计划(CXZZ11-0326)

摘　　要：采用不同粒径分布的单晶籽晶进行高效多晶硅铸锭,结果表明单晶籽晶的粒径分布对引晶效果影响显著。籽晶粒径在1~4mm范围时,引晶效果最佳;粒径大于4mm时,硅熔体流延现象的存在导致长晶初期晶体中位错密度偏高,少子寿命降低;粒径小于1mm时,细小的形核点也会影响晶体中的位错密度和少子寿命。对应电池片效率的结果也验证了该结论。In order to investigate the influence of particle size distribution of the seeds on the crystal growth of high-performance（HP）mc-Si,single crystal seeds with different particle size distribution of were used for casting ingot.The results revealed that the influence of particle size distribution of single crystal seeds on seeding effect was significant.When the particle size of seeds was 1-4mm range,seeding effect was the best.When the particle size of seeds was larger than 4mm,dislocation density was increased and minority carrier lifetime was reduced because of the phenomenon of flow-casting at the beginning of crystal growth.When the particle size of seeds was lower than 1mm,the too small nucleation sites also affected the dislocation density and minority carrier lifetime.Above conclusions also were validated by the results of solar cell efficiency.

关 键 词：高效多晶硅 半熔引晶 籽晶粒径分布 位错密度 

分 类 号：TM914.4[电气工程—电力电子与电力传动]