Effect of sintering temperature on microstructure and varistor properties of Zn-V-O-based ceramics incorporated with Mn-Nb-Tb  

烧结温度对含Mn-Nb-Tb的Zn-V-O基陶瓷显微组织和压敏性能的影响(英文)

作　　者：C.W.NAHM 

机构地区：[1]Semiconductor Ceramics Laboratory, Department of Electrical Engineering, Dongeui University

出　　处：《Transactions of Nonferrous Metals Society of China》2015年第12期4040-4045,共6页中国有色金属学报（英文版）

摘　　要：The effect of sintering temperature on microstructure and varistor properties of Zn-V-O-based ceramics incorporated with Mn-Nb-Tb was investigated. The results showed that the increase of sintering temperature in the range from 875 to 950 °C decreased the densities of sintered pellets in the range of 5.55 to 5.45 g/cm3 and increased the average grain size in the range of 4.1 to 8.8 ？m. The breakdown field decreased noticeably from 7443 to 1064 V/cm with increasing sintering temperature from 875 to 950 °C. The varistor ceramics sintered at 900 ？C exhibited nonlinear properties, with 49.4 in the nonlinear coefficient and 0.21 m A/cm2 in the leakage current density. The dielectric constant increased greatly from 440.1 to 2197.2 with increasing sintering temperature from 875 to 950 °C; however, the dissipation factor exhibited a fluctuation between 0.237 and 0.5. These ceramic compositions and sintering conditions can be applied to the development of advanced multiplayer varistors with silver as an inner electrode.研究烧结温度对含Mn-Nb-Tb的Zn-V-O基陶瓷显微组织和压敏性能的影响。结果表明,随着烧结温度由875°C升高到950°C,烧结陶瓷样品的密度由5.55 g/cm3降低到5.45 g/cm3,其平均晶粒尺寸由4.1μm增大至8.8μm,击穿场强由7443 V/cm显著降低至1064 V/cm。经900°C烧结的压敏陶瓷样品具有明显的非线性特性,其非线性系数为49.4,漏电流密度为0.21 m A/cm2。当烧结温度由875°C升高到950°C时,Zn-V-O基陶瓷样品的介电常数由440.1增大到2197.2,其损耗因数的变化范围为0.237-0.5。因此,本研究中Zn-V-O基陶瓷组分和烧结条件有利于以银为内电极的先进多层芯片压敏电阻的开发。

关 键 词：Zn-V-O-based ceramics Mn-Nb-Tb sintering varistor properties dielectric characteristics VARISTOR 

分 类 号：TQ174.1[化学工程—陶瓷工业]