抑制表面场增强提高相对论返波管功率容量  

Suppression of surface field enhancement to improve power capacity of RBWO

作　　者：张余川[1] 孙钧[1] 邵浩[1] 张晓微[1] 白现臣[1] 曹亦兵[1] 刘彦升[1] 陈昌华[1] 

机构地区：[1]西北核技术研究所高功率微波技术重点实验室,西安710024

出　　处：《强激光与粒子束》2016年第3期94-97,共4页High Power Laser and Particle Beams

基　　金：国家自然科学基金项目(11175144)

摘　　要：相对论返波管(RBWO)高频结构表面微凸起结构导致的表面场致电子发射会加速或加剧射频击穿过程,引起RBWO功率容量下降。为提高现有RBWO的功率容量,给出了RBWO高频结构表面场增强的抑制方法,对一种X波段RBWO表面进行了精密工艺处理后,将表面粗糙度降低至未经表面精密处理时的1/40以下,有效降低了高频结构表面场增强因子,减小了结构表面场致发射电子的能力。进一步开展的高功率微波实验研究表明,抑制表面场增强后X波段RBWO的功率容量提高了25%。The influence of field enhancement factors on the power capacity of relativistic backward wave oscillators is preliminarily investigated in the paper.Under the conditions of strong field,positive asperity and burr on the surface of high frequency structures will lead to field electron emission and RF breakdown,which can further generate plasma and lead to pulse shortening and reduction of power limit.By precisely polishing the surface of a kind of X band RBWO,the surface roughness can be reduced to less than 1/40 of the initial value,where the power limit will increase by at least 25%.

关 键 词：相对论返波管 表面场增强 射频击穿 功率容量 

分 类 号：TN125[电子电信—物理电子学]