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作 者:曹华珍[1] 钟杨[1] 伍廉奎[1] 张煜峰[1] 郑国渠[1]
机构地区:[1]浙江工业大学材料科学与工程学院,杭州310014
出 处:《Transactions of Nonferrous Metals Society of China》2016年第1期310-318,共9页中国有色金属学报(英文版)
基 金:Project(51374185) supported by the National Natural Science Foundation of China
摘 要:As-Sb alloy was electrodeposited from high arsenic-containing solutions. The influences of current density, Sb(3+) concentration, reaction temperature and HCl concentration on the electrolyte composition, cell voltage and current efficiency were investigated. The surface morphology, composition and structure of the deposits were analyzed by scanning electron microscopy(SEM), inductively coupled plasma mass spectrometry(ICP-MS) and X-ray diffraction(XRD), respectively. The results show that the prepared As-Sb alloy shows an amorphous structure under all conditions. Under the optimized condition, i.e., 10 g/L As(3+), 2 g/L Sb(3+), 4 mol/L HCl, current density of 4 mA/cm2 and temperature of 20 °C, desired As-Sb alloy with a composition of 70.26% As and 29.74% Sb(mass fraction) is obtained. What is more, the current efficiency is as high as 94.74% and high arsenic removal rate is achieved under this condition.在高浓度砷溶液中采用电沉积法制备As-Sb合金,考察电解液中电流密度、Sb^(3+)浓度、反应温度和盐酸浓度对电沉积过程中电解液成分、槽电压和电流效率的影响,并采用扫描电镜(SEM)、电感藕合等离子体质谱(ICP-MS)和X射线衍射(XRD)分别对沉积物的表面形貌、成分和结构进行分析。结果表明:在所研究的工艺条件下制备的As-Sb合金沉积层均为非晶结构。最优工艺如下:As^(3+)浓度为10 g/L,Sb^(3+)浓度为2 g/L,盐酸浓度为4 mol/L,电流密度为4 m A/cm^2,温度为20°C,在此条件下电流效率达到94.74%,沉积层含70.26%As和29.74% Sb(质量分数),砷的去除效率较高。
关 键 词:arsenic-containing solution hydrochloric system ELECTRODEPOSITION As-Sb alloy
分 类 号:TQ153[化学工程—电化学工业]
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