强磁场条件制备ZnO纳米线研究  

Preparation of ZnO Nanowires under High Magnetic Field

作　　者：申彩霞[1] 李梅[1] 刘伟[1] 

机构地区：[1]清华大学,北京100084

出　　处：《稀有金属材料与工程》2011年第S1期116-118,共3页Rare Metal Materials and Engineering

基　　金：中国博士后基金(20080440345)

摘　　要：采用真空蒸镀方法制备金属Zn膜,在不同磁场强度(0T-8T)条件下高温氧化金属Zn膜生长了ZnO纳米线,用扫描电子显微镜(SEM)观察了样品的表面形貌,用X射线衍射方法(XRD)研究了样品的晶体结构,分析表明磁场对ZnO纳米线的形貌有影响。用室温光致发光谱(PL)研究了ZnO纳米线的光谱性质,结果表明ZnO纳米线的绿光发射与制备样品时磁场强度相关。论文研究表明在磁场条件下制备的ZnO纳米线,其形貌和发光性质都受到制备条件的影响。Zn films prepared by vacuum evaporation were anneal to grow ZnO nanowires under different conditions of temperature and magnetic field. Scanning Electron Microscopy (SEM), X-ray diffraction (XRD) and Photoluminescent (PL) were used to characterize the properties of ZnO nanowires. Their topography is affected by magnetic field and temperature, as well as photoluminescent properties.

关 键 词：ZNO 纳米线 强磁场 

分 类 号：TB383.1[一般工业技术—材料科学与工程]