不同气氛下退火的ZnO/Bi_(3.25)La_(0.75)Ti_3O_(12)界面深度剖析（英文）  

XPS Depth Profile of ZnO/Bi_(3.25)La_(0.750Ti_3O_(12) under Different Annealing Ambient

作　　者：李佳[1] Michiko Yoshitake 宋伟杰[1] 

机构地区：[1]中国科学院宁波材料技术与工程研究所,浙江宁波315201 [2]National Institute for Materials Science,Tsukuba,Japan

出　　处：《稀有金属材料与工程》2016年第S1期453-456,共4页Rare Metal Materials and Engineering

基　　金：National Natural Science Foundation of China(51102250,11104290);Ningbo Natural Science Foundation(2013A610137);Ningbo Key Innovation Team(2011B82005)

摘　　要：采用溶胶-凝胶法制备了Bi_(3.25)La_(0.75)Ti_3O_(12)(BLT)铁电薄膜,并分别于Ar、O_2和空气中退火。同时,制备了BLT/ZnO(8nm)结构,并采用X射线光电子能谱深度剖析技术对界面的化学状态进行了分析。结果显示:BLT薄膜中的Bi扩散到了ZnO层中,ZnO层中的Zn也进入到BLT薄膜内部。同时,退火气氛中氧气的含量越多,Bi-O及Ti-O键将变得更为稳定。这一结果有助于对提升以半导体为沟道的铁电栅场效应晶体管的性能起到指导作用。Bi_(3.25)La_(0.75)Ti_3O_(12)(BLT) thin films were prepared by a sol-gel method followed by a rapid thermal annealing in Ar, O_2 and air atmosphere. Zn O thin films with the thickness of 8 nm were sputtered on BLT films and the interface chemical states were analyzed using an X-ray photoelectron spectroscopy(XPS) depth profile technique. Results show that diffusion of Bi into the Zn O layer and Zn into the BLT layer is observed. At the same time, the more abundant of oxygen in annealing ambient, the more stable the Bi-O and Ti-O bonding will get. These results will give some supports to the performance improvement of ferroelectric-gate field-effect transistors with semiconductor channel.

关 键 词：BLT ZNO 退火气氛 XPS 深度剖析 

分 类 号：TM221[一般工业技术—材料科学与工程] TB383.2[电气工程—电工理论与新技术]