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作 者:孙顶 葛阳 张力 许盛之 陈泽 王宁 梁雪娇 魏长春 赵颖 张晓丹
出 处:《Journal of Semiconductors》2016年第1期24-28,共5页半导体学报(英文版)
基 金:supported by the Specialized Research Fund for the PhD Program of Higher Education(No.20120031110039)
摘 要:Inorderto study the influence ofCu-rich growth on the performance ofthe Cu2ZnSnSe4 (CZTSe)thin film solar cells, a multi-stage co-evaporation process is applied. The CZTSe films are grown at a lower substrate temperature to reduce the existence time of Cux Sey at the first period caused by the volatility of SnSex. This study examines the surface morphology and device performance in Cu-rich growth and close-to-stoichiometric growth. Although the grain size of Cu-rich growth film increases a little, the difference was not dramatic as the results of CIGS reported previously. A model based on the grain boundary migration theory is proposed to explain the experimental results. The mechanisms of Cu-rich growth between CZTSe and CIGS might be different.Inorderto study the influence ofCu-rich growth on the performance ofthe Cu2ZnSnSe4 (CZTSe)thin film solar cells, a multi-stage co-evaporation process is applied. The CZTSe films are grown at a lower substrate temperature to reduce the existence time of Cux Sey at the first period caused by the volatility of SnSex. This study examines the surface morphology and device performance in Cu-rich growth and close-to-stoichiometric growth. Although the grain size of Cu-rich growth film increases a little, the difference was not dramatic as the results of CIGS reported previously. A model based on the grain boundary migration theory is proposed to explain the experimental results. The mechanisms of Cu-rich growth between CZTSe and CIGS might be different.
关 键 词:Cu2ZnSnSe4 CO-EVAPORATION Cu excess growth thin film solar cells
分 类 号:TM914.4[电气工程—电力电子与电力传动]
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