Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor  

作　　者：罗俊 赵胜雷 宓珉瀚 陈伟伟 侯斌 张进成 马晓华 郝跃 

机构地区：[1]Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University [2]School of Advanced Materials and Nanotechnology, Xidian University

出　　处：《Chinese Physics B》2016年第2期421-425,共5页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.61334002,61106106,and 61204085)

摘　　要：The effects of gate length L_G on breakdown voltage VBRare investigated in AlGaN/GaN high-electron-mobility transistors（HEMTs） with L_G= 1 μm^20 μm. With the increase of L_G, VBRis first increased, and then saturated at LG= 3 μm. For the HEMT with L_G= 1 μm, breakdown voltage VBRis 117 V, and it can be enhanced to 148 V for the HEMT with L-_G= 3 μm. The gate length of 3 μm can alleviate the buffer-leakage-induced impact ionization compared with the gate length of 1 μm, and the suppression of the impact ionization is the reason for improving the breakdown voltage.A similar suppression of the impact ionization exists in the HEMTs with LG〉 3 μm. As a result, there is no obvious difference in breakdown voltage among the HEMTs with LG= 3 μm^20 μm, and their breakdown voltages are in a range of 140 V–156 V.The effects of gate length L_G on breakdown voltage VBRare investigated in AlGaN/GaN high-electron-mobility transistors（HEMTs） with L_G= 1 μm^20 μm. With the increase of L_G, VBRis first increased, and then saturated at LG= 3 μm. For the HEMT with L_G= 1 μm, breakdown voltage VBRis 117 V, and it can be enhanced to 148 V for the HEMT with L-_G= 3 μm. The gate length of 3 μm can alleviate the buffer-leakage-induced impact ionization compared with the gate length of 1 μm, and the suppression of the impact ionization is the reason for improving the breakdown voltage.A similar suppression of the impact ionization exists in the HEMTs with LG〉 3 μm. As a result, there is no obvious difference in breakdown voltage among the HEMTs with LG= 3 μm^20 μm, and their breakdown voltages are in a range of 140 V–156 V.

关 键 词：A1GaN/GaN high-electron-mobility transistors （HEMTs） breakdown voltage gate length 

分 类 号：TN386[电子电信—物理电子学]