Modeling of a triple reduced surface field silicon-on-insulator lateral double-diffused metal–oxide–semiconductor field-effect transistor with low on-state resistance  

作　　者：王裕如 刘祎鹤 林兆江 方冬 李成州 乔明 张波 

机构地区：[1]State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China (UESTC) [2]Institute of Electronic and Information Engineering in Dongguan, UESTC

出　　处：《Chinese Physics B》2016年第2期430-435,共6页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant No.61376080);the Natural Science Foundation of Guangdong Province,China(Grant No.2014A030313736);the Fundamental Research Funds for the Central Universities,China(Grant No.ZYGX2013J030)

摘　　要：An analytical model for a novel triple reduced surface field（RESURF） silicon-on-insulator（SOI） lateral doublediffused metal–oxide–semiconductor（LDMOS） field effect transistor with n-type top（N-top） layer, which can obtain a low on-state resistance, is proposed in this paper. The analytical model for surface potential and electric field distributions of the novel triple RESURF SOI LDMOS is presented by solving the two-dimensional（2D） Poisson＇s equation, which can also be applied to single, double and conventional triple RESURF SOI structures. The breakdown voltage（BV） is formulized to quantify the breakdown characteristic. Besides, the optimal integrated charge of N-top layer（Q_（ntop）） is derived, which can give guidance for doping the N-top layer. All the analytical results are well verified by numerical simulation results,showing the validity of the presented model. Hence, the proposed model can be a good tool for the device designers to provide accurate first-order design schemes and physical insights into the high voltage triple RESURF SOI device with N-top layer.An analytical model for a novel triple reduced surface field（RESURF） silicon-on-insulator（SOI） lateral doublediffused metal–oxide–semiconductor（LDMOS） field effect transistor with n-type top（N-top） layer, which can obtain a low on-state resistance, is proposed in this paper. The analytical model for surface potential and electric field distributions of the novel triple RESURF SOI LDMOS is presented by solving the two-dimensional（2D） Poisson＇s equation, which can also be applied to single, double and conventional triple RESURF SOI structures. The breakdown voltage（BV） is formulized to quantify the breakdown characteristic. Besides, the optimal integrated charge of N-top layer（Q_（ntop）） is derived, which can give guidance for doping the N-top layer. All the analytical results are well verified by numerical simulation results,showing the validity of the presented model. Hence, the proposed model can be a good tool for the device designers to provide accurate first-order design schemes and physical insights into the high voltage triple RESURF SOI device with N-top layer.

关 键 词：analytical model triple reduced surface field （RESURF） silicon-on-insulator （SOI） n-type top （N-top） layer 

分 类 号：TN386[电子电信—物理电子学] TP332[自动化与计算机技术—计算机系统结构]