Influence of trap-assisted tunneling on trap-assisted tunneling current in double gate tunnel field-effect transistor  

作　　者：蒋智 庄奕琪 李聪 王萍 刘予琪 

机构地区：[1]School of Microelectronics, Xidian University, Xi'an 710071. China

出　　处：《Chinese Physics B》2016年第2期463-467,共5页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.61574109 and 61204092)

摘　　要：Trap-assisted tunneling（TAT） has attracted more and more attention, because it seriously affects the sub-threshold characteristic of tunnel field-effect transistor（TFET）. In this paper, we assess subthreshold performance of double gate TFET（DG-TFET） through a band-to-band tunneling（BTBT） model, including phonon-assisted scattering and acoustic surface phonons scattering. Interface state density profile（D_（it）） and the trap level are included in the simulation to analyze their effects on TAT current and the mechanism of gate leakage current.Trap-assisted tunneling（TAT） has attracted more and more attention, because it seriously affects the sub-threshold characteristic of tunnel field-effect transistor（TFET）. In this paper, we assess subthreshold performance of double gate TFET（DG-TFET） through a band-to-band tunneling（BTBT） model, including phonon-assisted scattering and acoustic surface phonons scattering. Interface state density profile（D_（it）） and the trap level are included in the simulation to analyze their effects on TAT current and the mechanism of gate leakage current.

关 键 词：trap-assisted tunneling （TAT） tunnel field-effect transistors （TFETs） optical phonon scattering （OP） acoustic phonon scattering （AP） 

分 类 号：TN386[电子电信—物理电子学] TQ422[化学工程]