Improvement in electrical properties of high-κ film on Ge substrate by an improved stress relieved pre-oxide method  

作　　者：樊继斌 丁晓甫 刘红侠 谢鹏飞 张袁涛 廖清良 

机构地区：[1]School of Materials Science and Engineering, Chang'an University [2]School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University

出　　处：《Chinese Physics B》2016年第2期468-471,共4页中国物理B（英文版）

摘　　要：High-κ /Ge gate stack has recently attracted a great deal of attention as a potential candidate to replace planar silicon transistors for sub-22 generation. However, the desorption and volatilization of GeO hamper the development of Ge-based devices. To cope with this challenge, various techniques have been proposed to improve the high-κ /Ge interface. However,these techniques have not been developed perfectly yet to control the interface. Therefore, in this paper, we propose an improved stress relieved pre-oxide（SRPO） method to improve the thermodynamic stability of the high-κ /Ge interface. The x-ray photoelectron spectroscopy（XPS） and atomic force microscopy（AFM） results indicate that the GeO volatilization of the high-κ /Ge gate stack is efficiently suppressed after 500℃ annealing, and the electrical characteristics are greatly improved.High-κ /Ge gate stack has recently attracted a great deal of attention as a potential candidate to replace planar silicon transistors for sub-22 generation. However, the desorption and volatilization of GeO hamper the development of Ge-based devices. To cope with this challenge, various techniques have been proposed to improve the high-κ /Ge interface. However,these techniques have not been developed perfectly yet to control the interface. Therefore, in this paper, we propose an improved stress relieved pre-oxide（SRPO） method to improve the thermodynamic stability of the high-κ /Ge interface. The x-ray photoelectron spectroscopy（XPS） and atomic force microscopy（AFM） results indicate that the GeO volatilization of the high-κ /Ge gate stack is efficiently suppressed after 500℃ annealing, and the electrical characteristics are greatly improved.

关 键 词：high-K film GeO volatilization stress relieved pre-oxide ANNEALING 

分 类 号：TN304.11[电子电信—物理电子学]