Realization of a flux-driven memtranstor at room temperature  

作　　者：申世鹏 尚大山 柴一晟 孙阳 

机构地区：[1]Beijing National Laboratory for Condensed Matter Physics, Institute of Physics,Chinese Academy of Sciences

出　　处：《Chinese Physics B》2016年第2期472-476,共5页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grants Nos.11227405,11534015,11274363,and 11374347);the Natural Science Foundation from the Chinese Academy of Sciences(Grant No.XDB07030200)

摘　　要：The memtranstor has been proposed to be the fourth fundamental circuit memelement in addition to the memristor,memcapacitor, and meminductor. Here, we demonstrate the memtranstor behavior at room temperature in a device made of the magnetoelectric hexaferrite（Ba_（0.5）Sr_（1.5）Co_2Fe_（11） AlO_（22）） where the electric polarization is tunable by external magnetic field. This device shows a nonlinear q–р relationship with a butterfly-shaped hysteresis loop, in agreement with the anticipated memtranstor behavior. The memtranstor, like other memelements, has a great potential in developing more advanced circuit functionalities.The memtranstor has been proposed to be the fourth fundamental circuit memelement in addition to the memristor,memcapacitor, and meminductor. Here, we demonstrate the memtranstor behavior at room temperature in a device made of the magnetoelectric hexaferrite（Ba_（0.5）Sr_（1.5）Co_2Fe_（11） AlO_（22）） where the electric polarization is tunable by external magnetic field. This device shows a nonlinear q–р relationship with a butterfly-shaped hysteresis loop, in agreement with the anticipated memtranstor behavior. The memtranstor, like other memelements, has a great potential in developing more advanced circuit functionalities.

关 键 词：fundamental circuit element magnetoelectric effect MULTIFERROIC memtranstor MEMRISTOR 

分 类 号：TM54[电气工程—电器]