新型SnO_2微气敏传感器的设计  

Development of New SnO_2 Micro Gas Sensor

作　　者：刘丽丽[1] 刘丽[1] 李海英[1] 王连元[1] 何越[1] 

机构地区：[1]超硬材料国家重点实验室吉林大学物理学院,长春130012

出　　处：《真空科学与技术学报》2016年第1期6-9,共4页Chinese Journal of Vacuum Science and Technology

基　　金：吉林省科技厅重点科技攻关项目(20140204027GX)

摘　　要：设计了一种新型微气敏传感器的结构,采用SnO_2作为敏感材料,并利用ANSYS软件仿真分析,优化了该传感器的某些结构参数。结果得出:传感器基底结构中从上往下SiO_2-Si-SiO_2三层材料的厚度依次为10,120,170μm,加热电极和测量电极宽度为10,30μm时,微传感器SnO_2材料区域的温度为高温态且分布均匀,并且此结构的传感器中心材料区域的磁场强度为最小值9.84×10^(-10)A/M,与最大值383.066 A/M相比可忽略不计。A novel type of micro gas sensor was designed with SnO2 as the sensitive material.The influence of the sensor＇s structure,including but not limited to the geometries of the heater and Pt-electrode,structure of SnO2 disk,thicknesses of SiO2/Si/SiO2 triple-layer and magnetic field,on the performance of the sensor was modeled and simulated in finite element method with software package ANSYS to optimize the design.The simulated results show that the high and uniform temperature distribution could be obtained in the SnO2 sensing disk with the optimized SiO2/Si/SiO2 triple- layer10,120 and 170 μm in thicknesses.In addition,the lowest magnetic field intensity in the sensor＇s center region was found to be 9.84 × 10^（-10） A/M,much lower than the highest one,383.066 A/M,around the heater.

关 键 词：微气敏传感器 二氧化锡 ANSYS 温度分布 磁场分布 

分 类 号：TP212.2[自动化与计算机技术—检测技术与自动化装置]