Design and analysis on four stage SiGe HBT low noise amplifier  

作　　者：井凯 Zhuang Yiqi Li Zhenrong Lin Zhiyu 

机构地区：[1]Department of Microelectronics,Xidian University [2]State Key Laboratory of Wide Band Gap Semiconductor

出　　处：《High Technology Letters》2015年第3期358-363,共6页高技术通讯（英文版）

基　　金：Supported by the National Natural Science Foundation of China(No.61076101,61204092,61306033)

摘　　要：Focusing on the linearity shortcoming on a bipolar low noise amplifier(LNA),a new 6 ~14GHz four stage SiGe HBT LNA is proposed.This amplifier adopts a method of gain allocation on multiple stages to avoid the limitation on linearity especially with the addition of negative gain on the third stage.To realize gain flatness,extra zero is introduced to compensate the gain roll-off formed by pole,and local shunt-shunt negative feedback is used to widen the bandwidth as well as optimize circuit' s noise.Simulated results have shown that in 6 ~14GHz,this circuit achieves noise figure(NF) less than 3dB,gain of 17.8dB(+0.2dB),input and output reflection parameters of less than- 10 dB,and the K factor is above 1.15.Focusing on the linearity shortcoming on a bipolar low noise amplifier （LNA） , a new 6 14GHz four stage SiGe HBT LNA is proposed. This amplifier adopts a method of gain allocation on multiple stages to avoid the limitation on linearity especially with the addition of negative gain on the third stage. To realize gain flatness, extra zero is introduced to compensate the gain roll-off formed by pole, and local shunt-shunt negative feedback is used to widen the bandwidth as well as optimize circuit＇ s noise. Simulated results have shown that in 6 - 14GHz, this circuit achieves noise figure （NF） less than 3dB, gain of 17.8dB （ ＋ 0.2dB）, input and output reflection parameters of less than - 10dB, and the K factor is above 1.15.

关 键 词：low noise amplifier （LNA） pole-zero cancellation noise figure （NF） SiGe HBT BJT LINEARITY 

分 类 号：TN722.3[电子电信—电路与系统] TN325.3