High Thermoelectric Figure of Merit of Ag8SnS6 Component Prepared by Electrodeposition Technique  

作　　者：TAHER Ghrib AMAL Lafy Al-Otaibi MUNIRAH Abdullah Almessiere IBTISSEM Ben Assaker RADHOUANE Chtourou 

机构地区：[1]Laboratory of Physical Alloys, Science Faculty of Dammam, University of Dammam, Saudi Arabia [2]Laboratoire Photovoltaique, Centre de Recherches et des Technologies de l'Energie Technopole bozj cedria, Bp 95, hammam lif 2050, Tunisie

出　　处：《Chinese Physics Letters》2015年第12期126-130,共5页中国物理快报（英文版）

基　　金：Supported by the Scientific Research Deanship of University of Dammam under Grant No 2014264

摘　　要：A new thermoelectric material Ag8SnS6, with ultra-low thermal conductivity in thin film shape, is prepared on indium tin oxide coated g/ass （ITO） substrates using a chemical process via the electrodeposition technique. The structural, thermal and electrical properties are studied and presented in detail, which demonstrate that the material is of semiconductor type, orthorhombic structure, with a band gap in the order of 1.56eV and a free carrier concentration of 1.46 × 10^17 cm-3. The thermal conductivity, thermal diffusivity, thermal conduction mode, Seebeck coefficient and electrical conductivity are determined using the photo-thermal deflection technique combined with the Boltzmann transport theory and Cahill＇s model, showing that the AgsSnS6 material has a low thermal conductivity of 3.8 Wm - 1K- 1, high electrical conductivity of 2.4 × 10^5 Sm- 1, Seebeck coefficient of -180μVK-1 and a power factor of 6.9mWK-2m-1, implying that it is more efficient than those obtained in recently experimental investigations for thermoelectric devices.A new thermoelectric material Ag8SnS6, with ultra-low thermal conductivity in thin film shape, is prepared on indium tin oxide coated g/ass （ITO） substrates using a chemical process via the electrodeposition technique. The structural, thermal and electrical properties are studied and presented in detail, which demonstrate that the material is of semiconductor type, orthorhombic structure, with a band gap in the order of 1.56eV and a free carrier concentration of 1.46 × 10^17 cm-3. The thermal conductivity, thermal diffusivity, thermal conduction mode, Seebeck coefficient and electrical conductivity are determined using the photo-thermal deflection technique combined with the Boltzmann transport theory and Cahill＇s model, showing that the AgsSnS6 material has a low thermal conductivity of 3.8 Wm - 1K- 1, high electrical conductivity of 2.4 × 10^5 Sm- 1, Seebeck coefficient of -180μVK-1 and a power factor of 6.9mWK-2m-1, implying that it is more efficient than those obtained in recently experimental investigations for thermoelectric devices.

关 键 词：Figure High Thermoelectric Figure of Merit of Ag8SnS6 Component Prepared by Electrodeposition Technique Ag SnS 

分 类 号：TQ131.22[化学工程—无机化工] TQ153