High Signal-to-Noise Ratio Hall Devices with a 2D Structure of Dual δ-Doped GaAs/AlGaAs for Low Field Magnetometry  

作　　者：陈笛 赵柏秦 张新 

机构地区：[1]Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 [2]Shangdong Wave of Huaguang Photonics LTD, dinan 250101

出　　处：《Chinese Physics Letters》2015年第12期167-170,共4页中国物理快报（英文版）

摘　　要：Single arid dual δ-doped GaAs/AlGaAs two-dimensional electron gas （2DEG） Hall devices for low magnetic field detection at room temperature are prepared. The sensitivity and noise spectrum of the Hall devices are measured for evaluating the signal-to-noise ratio performance. It is observed that the dual δ-doped Hall devices achieve a minimum detectable magnetic field as low as 303 n T, which is better than the single δ doped Hall device prepared under the same growth condition.Single arid dual δ-doped GaAs/AlGaAs two-dimensional electron gas （2DEG） Hall devices for low magnetic field detection at room temperature are prepared. The sensitivity and noise spectrum of the Hall devices are measured for evaluating the signal-to-noise ratio performance. It is observed that the dual δ-doped Hall devices achieve a minimum detectable magnetic field as low as 303 n T, which is better than the single δ doped Hall device prepared under the same growth condition.

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]