Enhancement of phosphors-solubility in ZnO by thermal annealing  

作　　者：K.Mahmood N.Amin A.Ali M.Ajaz un Nabi M.Imran Arshad M.Zafar M.Asghar 

机构地区：[1]Department of Physics, GC University Faisalabad [2]Department of Physics, Islamia University of Bahawalpur

出　　处：《Journal of Semiconductors》2015年第12期30-33,共4页半导体学报（英文版）

基　　金：the Higher Education Commission (HEC) of Pakistan for the financial assistance under project # IPFP/HRD/HEC/2014/2016

摘　　要：We have demonstrated the effect of annealing temperature on the diffusion density of phosphors in zinc oxide. The P-dopant P430 was sprayed on ZnO pellets and annealed at different temperatures from 500 to 1000 ℃ with a step of 100 ℃ for one hour using a programmable furnace. The concentration of P was controlled by varying the annealing temperature and the maximum solubility of P （3% At） was achieved at annealing 800 ℃ determined by energy dispersive X-ray diffraction （EDX） measurements. X-ray diffraction （XRD） confirmed the hexagonal structure of ZnO and showed that the growth direction was along the c-axis. We observed a maximum up shift in the （002） plane at an annealing temperature of 800 ℃, suggesting that P atoms replaced Zn atoms in the structure which results in the reduction of the lattice constant. Room temperature photoluminescence （PL） spectrum consists of a peak at 3.28 eV and related to band edge emission, but samples annealed at 800 and 900 ℃ have an additional donor acceptor pair peak at 3.2 eV. Hall effect measurements confirmed the p-type conductivity of the sample annealed at 800 ℃.We have demonstrated the effect of annealing temperature on the diffusion density of phosphors in zinc oxide. The P-dopant P430 was sprayed on ZnO pellets and annealed at different temperatures from 500 to 1000 ℃ with a step of 100 ℃ for one hour using a programmable furnace. The concentration of P was controlled by varying the annealing temperature and the maximum solubility of P （3% At） was achieved at annealing 800 ℃ determined by energy dispersive X-ray diffraction （EDX） measurements. X-ray diffraction （XRD） confirmed the hexagonal structure of ZnO and showed that the growth direction was along the c-axis. We observed a maximum up shift in the （002） plane at an annealing temperature of 800 ℃, suggesting that P atoms replaced Zn atoms in the structure which results in the reduction of the lattice constant. Room temperature photoluminescence （PL） spectrum consists of a peak at 3.28 eV and related to band edge emission, but samples annealed at 800 and 900 ℃ have an additional donor acceptor pair peak at 3.2 eV. Hall effect measurements confirmed the p-type conductivity of the sample annealed at 800 ℃.

关 键 词：ZNO P-dopant EDX XRD PL 

分 类 号：TN304.21[电子电信—物理电子学]