Properties of n-type SnO_2 semiconductor prepared by spray ultrasonic technique for photovoltaic applications  

作　　者：H.Bendjedidi A.Attaf H.Saidi M.S.Aida S.Semmari A.Bouhdjar Y.Benkhetta 

机构地区：[1]Laboratoire de Physique des Couches Minces et Applications, Université de Biskra [2]Laboratoire des Couches minces et Interfaces, Université Mentouri

出　　处：《Journal of Semiconductors》2015年第12期34-37,共4页半导体学报（英文版）

摘　　要：Transparent conducting n-type SnO2 semiconductor films were fabricated by employing an inexpensive, simplified spray ultrasonic technique using an ultrasonic generator at deferent substrate temperatures （300, 350, 400, 450 and 500 ℃）. The structural studies reveal that the SnO2 films are polycrystalline at 350,400, 450, 500 ℃ with preferential orientation along the （200） and （101） planes, and amorphous at 300 ℃. The crystallite size of the films was found to be in the range of 20.9-72.2 nm. The optical transmittance in the visible range and the optical band gap are 80% and 3.9 eV respectively. The films thicknesses were varied between 466 and 1840 nm. The resistivity was found between 1.6 and 4 × 10^-2 Ω.cm. This simplified ultrasonic spray technique may be considered as a promising alternative to a conventional spray for the massive production of economic SnO2 films for solar cells, sensors and opto-electronic applications.Transparent conducting n-type SnO2 semiconductor films were fabricated by employing an inexpensive, simplified spray ultrasonic technique using an ultrasonic generator at deferent substrate temperatures （300, 350, 400, 450 and 500 ℃）. The structural studies reveal that the SnO2 films are polycrystalline at 350,400, 450, 500 ℃ with preferential orientation along the （200） and （101） planes, and amorphous at 300 ℃. The crystallite size of the films was found to be in the range of 20.9-72.2 nm. The optical transmittance in the visible range and the optical band gap are 80% and 3.9 eV respectively. The films thicknesses were varied between 466 and 1840 nm. The resistivity was found between 1.6 and 4 × 10^-2 Ω.cm. This simplified ultrasonic spray technique may be considered as a promising alternative to a conventional spray for the massive production of economic SnO2 films for solar cells, sensors and opto-electronic applications.

关 键 词：tin oxide thin films spray ultrasonic structural properties optical properties 

分 类 号：TN304.2[电子电信—物理电子学]