Proton radiation effect of NPN-input operational amplifier under different bias conditions  

作　　者：姜柯 陆妩 郭旗 何承发 王信 刘默寒 李小龙 

机构地区：[1]Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences [2]Xinjiang Key Laboratory of Electronic Information Material and Device [3]University of Chinese Academy of Sciences

出　　处：《Journal of Semiconductors》2015年第12期114-118,共5页半导体学报（英文版）

摘　　要：NPN-input bipolar operational amplifiers LM741 were irradiated with ^60Coγ-ray, 3 MeV protons and10 MeV protons respectively at different biases to investigating the proton radiation response of the NPN-input operational amplifier. The comparison of protons with^60Coγ-rays showed that the proton radiation mainly induced ionization damage in LM741. Under different bias conditions, the radiation sensitivity is different; zero biased devices show more radiation sensitivity in the input biased current than forward biased devices. Supply current（±Icc）is another parameter that is sensitive to proton radiation,^60Coγ-ray, 3 MeV and 10 MeV proton irradiation would induce a different irradiation response in ±Icc, which is caused by different ionization energy deposition and displacement energy deposition of^60Coγ-ray, 3 MeV and 10 MeV proton irradiation.NPN-input bipolar operational amplifiers LM741 were irradiated with ^60Coγ-ray, 3 MeV protons and10 MeV protons respectively at different biases to investigating the proton radiation response of the NPN-input operational amplifier. The comparison of protons with^60Coγ-rays showed that the proton radiation mainly induced ionization damage in LM741. Under different bias conditions, the radiation sensitivity is different; zero biased devices show more radiation sensitivity in the input biased current than forward biased devices. Supply current（±Icc）is another parameter that is sensitive to proton radiation,^60Coγ-ray, 3 MeV and 10 MeV proton irradiation would induce a different irradiation response in ±Icc, which is caused by different ionization energy deposition and displacement energy deposition of^60Coγ-ray, 3 MeV and 10 MeV proton irradiation.

关 键 词：NPN input bipolar operational amplifier proton radiation different biases radiation effect 

分 类 号：TN722.77[电子电信—电路与系统] O613.71[理学—无机化学]