Design of broadband class-F power amplifier with high-order harmonic suppression for S-band application  

作　　者：林俊明 章国豪 郑耀华 李思臻 张志浩 陈思弟 

机构地区：[1]Guangdong University of Technology

出　　处：《Journal of Semiconductors》2015年第12期119-123,共5页半导体学报（英文版）

摘　　要：A broadband class-F power amplifier for an S-band handset device is integrated on a 330.82 mm^3 die using an In Ga /GaAs HBT process. With LC serial harmonic traps immersed into the broadband output matching circuit, good harmonic suppression performance can be achieved. A pure resistive impedance of the matching circuit, but near zero at second and infinite at third harmonic frequency, which enhances the efficiency, is obtained across 1.8–2.5 GHz. Tested with a continuous wave（CW） signal, the PA delivers an output power of 34 dBm and achieves a PAE of 57% at 2 GHz. In addition, excellent harmonic suppression levels of less than –53 dBc across the second to fifth harmonic are obtained.A broadband class-F power amplifier for an S-band handset device is integrated on a 330.82 mm^3 die using an In Ga /GaAs HBT process. With LC serial harmonic traps immersed into the broadband output matching circuit, good harmonic suppression performance can be achieved. A pure resistive impedance of the matching circuit, but near zero at second and infinite at third harmonic frequency, which enhances the efficiency, is obtained across 1.8–2.5 GHz. Tested with a continuous wave（CW） signal, the PA delivers an output power of 34 dBm and achieves a PAE of 57% at 2 GHz. In addition, excellent harmonic suppression levels of less than –53 dBc across the second to fifth harmonic are obtained.

关 键 词：S-BAND power amplifier BROADBAND class-F harmonic suppression InGaP/GaAs HBT 

分 类 号：TN722.75[电子电信—电路与系统] TM714.3[电气工程—电力系统及自动化]