氨气还原氮化法制备TiN薄膜及其SERS效应研究  

Preparation of TiN films via ammonia reduction nitridation process and their SERS effect

作　　者：陈颖 魏恒勇[1,2] 董占亮 卜景龙 王瑞生 魏颖娜 林健[2] 

机构地区：[1]华北理工大学材料科学与工程学院分析测试中心河北省无机非金属材料重点实验室,河北唐山063009 [2]同济大学材料科学与工程学院,上海200092

出　　处：《功能材料》2016年第2期2197-2200,共4页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(51272066);河北省自然科学基金资助项目(E2013209183);华北理工大学科学研究基金资助项目(Z201405)

摘　　要：以四氯化钛乙醇溶液为钛源,采用氨气还原氮化法成功制备了TiN薄膜,利用XRD、RAMAN、FE-SEM、TEM、SAED及UV-VIS-NIR表征薄膜结构及光学性能。结果表明,TiN薄膜为NaCl型面心立方TiN晶体,膜厚在250nm左右。UV-VIS-NIR分析显示TiN薄膜在500nm附近出现了特征表面等离子体共振吸收峰。利用R6G作为探针分子研究了TiN薄膜拉曼增强效应,结果发现,TiN薄膜具有显著的拉曼增强效应,与空白石英基片相比,TiN薄膜对R6G增强因子为6.08×10~3,检出限为10^(-6) mol/L。Titanium tetrachloride was used as raw material,the TiN films were successfully prepared via ammonia reduction nitridation process.The TiN films were investigated by XRD,RAMAN,FE-SEM,TEM,SAED and UV-VIS-NIR.The crystalline phase of thin film was sodium chloride-type face-centered cubic structure.and the thickness of TiN films was about 250 nm.UV visible spectroscopy showed that the surface plasma resonance absorption peak appeared at 520 nm.In order to study the Surface enhanced Raman scattering activity of TiN,R6 Gwas choose as probe molecule.The results showed that the TiN thin films had obvious SERS effect,comparing with the blank quartz substrate.The enhancement factor of TiN thin films was 6.08×10~3,and the detection limit was 10^(-6) mol/L.

关 键 词：TIN 薄膜 SERS 

分 类 号：O484[理学—固体物理]