利用椭偏仪研究氢气退火处理对ZnO-Ga薄膜光学性能的影响（英文）  

Optical properties of hydrogenated ZnO-Ga thin films studied by spectroscopic ellipsometry

作　　者：杨娇[1] 高美珍[1] 

机构地区：[1]兰州大学物理科学与技术学院磁学与磁性材料教育部重点实验室,甘肃兰州730000

出　　处：《红外与毫米波学报》2016年第1期6-10,共5页Journal of Infrared and Millimeter Waves

基　　金：Supported by the National Natural Science Foundation of China(51371093);Program for Changjiang Scholars and Innovative Research Team in University(IRT1251)

摘　　要：通过溶胶凝胶技术制备了不同Ga掺杂含量的Zn O透明导电薄膜,研究了Ga掺杂对GZO薄膜结构、电学及光学性能的影响.从X射线衍射光谱分析,所有薄膜均表现为六方纤锌矿结构,经过氢气退火处理之后,薄膜的电学性能均得到提高,当Ga掺杂含量为5 at%时,得到薄膜的电阻率为3.410×10^-3Ω·cm.利用可变入射角椭圆偏振光谱仪（VASE）在270-1 600 nm波长范围内研究了GZO薄膜折射率和消光系数的变化,采用双振子模型对实验数据进行拟合.The effects of Ga doping on structural,electrical,and optical properties of hydrogenated Zn O-Ga（ GZO） thin films deposited by sol-gel technique have been investigated. From the X-ray diffraction observations,the films doped with different gallium concentrations were found to be pure wurtzite-structured Zn O. The electrical properties of the hydrogen-annealed films were improved and a lowest resistivity of 3. 410 × 10^-3Ω·cm was obtained. The refractive index and extinction coefficient of Zn O-Ga thin films were determined in the range of 270 -1600 nm by varying angle spectroscopic ellipsometry（ VASE）. The simulation was carried out using a double oscillator model,which includes the Psemi-M O equation and the rho-tau Drude equation.

关 键 词：GZO薄膜 氢处理 椭圆偏振光谱仪 双振子模型 

分 类 号：O4[理学—物理]