n-on-p结构深台面延伸波长InGaAs探测器的ICPCVD钝化工艺  

ICPCVD passivation of n on p structure deep mesa extended wavelength InGaAs photodetectors

作　　者：石铭[1,2,3] 邵秀梅[1,2] 唐恒敬[1,2] 李淘[1,2] 黄星[1,2,3] 曹高奇 王瑞[1,2,3] 李平[1,2,3] 李雪[1,2] 龚海梅[1,2] 

机构地区：[1]中国科学院上海技术物理研究所传感技术国家重点实验室,上海200083 [2]中国科学院上海技术物理研究所红外成像材料与器件重点实验室,上海200083 [3]中国科学院大学,北京100049

出　　处：《红外与毫米波学报》2016年第1期47-51,共5页Journal of Infrared and Millimeter Waves

基　　金：国家重点基础研究发展计划资助973项目(2012CB619200);国家自然科学基金(61205105;61376052和61475179)~~

摘　　要：采用ICP刻蚀(inductively coupled plasma etching)工艺制备了深台面n-on-p结构的可响应到2.4μm的延伸波长8×1元线列In Ga As探测器.器件表面采用ICP源激发的N2等离子体进行处理,然后再使用ICPCVD(inductively coupled plasma chemical vapor deposition)沉积一层Si Nx薄膜的钝化工艺.不同面积光敏元器件的电流—电压特性分析显示器件在常温和低温下侧面电流均得到有效抑制,激活能分析显示了器件优异的暗电流特性,在-10 m V偏压下,在200 K和300 K温度下暗电流密度分别为94.2 n A/cm2和5.5×10-4A/cm2.In Ga As 8 × 1 linear arrays photodetectors with n-on-p structure and deep mesa,which can response at extended wavelength of 2. 4 μm,were fabricated by ICP etching（ inductively coupled plasma etching） process in the paper. The device surface was cleaned by N2 plasma activated by ICP,then Si Nxpassivation layer was deposited by ICPCVD（ inductively coupled plasma chemical vapor deposition）） on the device surface. The current-voltage analysis of different area devices indicated that the lateral surface current was suppressed effectively at both room and lower temperature. Activation energy analysis illustrated the excellent dark current characteristics. At- 10 m V bias,the dark current density is 94. 2 n A / cm^2 and 5. 5 × 10^-4A / cm^2 at temperatures of 200 K and 300 K,respectively.

关 键 词：INGAAS ICPCVD 暗电流 n-on-p 钝化 

分 类 号：TN21[电子电信—物理电子学]