石墨烯带隙的调控及其研究进展  

Modifying Bandgap of Graphene and its Recent Developments

作　　者：蔡乐[1] 王华平[1] 于贵[1] 

机构地区：[1]中国科学院化学研究所,北京分子科学国家实验室,北京100190

出　　处：《物理学进展》2016年第1期21-33,共13页Progress In Physics

基　　金：国家自然科学基金(批准号:61390502);国家重点基础研究发展计划(批准号:2013CBA01602);中国科学院B类战略性先导科技专项(批准号:XDB12030100)项目的资助

摘　　要：石墨烯是一种单原子层的二维材料,因其独特的晶格结构而具备十分优越的性能,引起了科学家的广泛关注。但因其价带与导带相交于狄拉克点,导致石墨烯为没有带隙的半金属,限制了其在纳电子学器件中的应用。为了打开石墨烯的带隙,研究者们付出了巨大的努力。在石墨烯中引入带隙的方法包括量子限制法、掺杂法和对称性破缺法,它们分别是将电子限制在一维的石墨烯纳米带中、对石墨烯进行n-型或p-型掺杂以及在双层石墨烯的垂直方向施加外加电场使双层石墨烯的对称性破缺。本文着重介绍石墨烯纳米带的合成法、石墨烯掺杂的种类和打破双层石墨烯对称性的方法。Graphene, a single atomic layer, is a kind of two-dimensional material, and it has aroused widespread concern. Graphene shows excellent physical and chemical properties because of its unique lattice structure. However, conduction band of graphene intersects with its valence band on the Dirac point, thus graphene exhibits a zero-band gap with linear band dispersion at the Fermi-level, limiting its application in nanoelectronic devices area. To solve the problem of the band gap of graphene, researchers have paid a tremendous effort. The way commonly used to in- troduce the band gap of graphene is quantum confinement, doping method, and twisted symmetry method. The ways introducing bandgap of graphene include electron limited in one-dimensional graphene nanoribbons, graphene conducted n-type or p-type doping and an applied electric field in the vertical direction in bilayer graphene to twist symmetry. Therefore, this article focuses on the preparation of graphene nanoribbons, graphene doping type, and introduction of how to twist symmetry in bilayer graphene.

关 键 词：石墨烯 带隙 调控 纳米带 掺杂 双层石墨烯 

分 类 号：O613.71[理学—无机化学] TB383.1[理学—化学]