Zn缺位对Ba(Co_(0.6)Zn_(0.4))_(1/3)Nb_(2/3)O_3陶瓷性能的影响  

The Effects of Zn Deficiency on Microwave Dielectric Properties of Ba(Co_(0.6)Zn_(0.4))_(1/3)Nb_(2/3)O_3 Ceramics

作　　者：张玉芹[1] 周晓华[1] 杨新石 孙成礼[1] 张树人[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件重点实验室,四川成都610054

出　　处：《压电与声光》2016年第1期130-133,共4页Piezoelectrics & Acoustooptics

基　　金：中央高校基本科研业务费专项基金资助项目(ZYGX2012J035)

摘　　要：采用传统固相反应法制备了Ba(Co0.58Y0.02Zn0.4-x)1/3Nb2/3O3(x=0,0.01,0.02,0.03,0.04,0.06)陶瓷,系统研究了Zn缺位对陶瓷的物相组成、微观结构和微波介电性能的影响。X线衍射(XRD)结果表明所有配方陶瓷的主晶相均为BaZn0.33Nb0.67O3-Ba3CoNb2O9(BCZN),并存在不同量的第二相Ba8CoNb6O24,适量的Zn缺位可提高BCZN体系的有序度,x=0.02时,其有序度最大。电镜扫描(SEM)结果表明适量的Zn缺位可促进烧结致密化,但Zn缺位过多,会使第二相增多,陶瓷的致密度恶化。随着x的增加,陶瓷的介电常数(εr)基本不变,但品质因数与频率的乘积(Q×f)得到了有效的改善,谐振频率温度系数(τf)先减小后增大。当x=0.02时,BCZN体系陶瓷的εr=35.12,Q×f=52 678GHz,τf=3.28×10-6/℃。The effects of Zn deficiency on the microwave dielectric properties of Ba（Co0.6Zn0.4-x）1/3Nb2/3O3（x=0~0.06）ceramics prepared by the conventional solid-state route technique were investigated in this paper.The Xray diffraction（XRD）results presented that all the well sintered samples exhibited the main phase of BaZn0.33Nb0.67O3-Ba3CoNb2O9 and a certain amount of Ba8CoNb6O24 second phase.Appropriate Zn deficiency content was found to increase the cation ordering degree,which reached maximum when xis 0.02.Then the SEM pictures shown that the ceramics with appropriate Zn deficiency content demonstrated a dense microstructure,while the density of the ceramics decreased with excessive Zn deficiency because of the secondary phase Ba8CoNb6O24.Although theεralmost kept unchanged,appropriate Zn deficiency content would also greatly improve the Q×fvalue;meanwhile,theτfvalue first decreased and then slightly increased with increasing of x.At last,the relative good microwave dielectric properties（εr=35.21,Q×f=52 678 GHz,τf=3.28×10-6/℃）were obtained for x=0.02.

关 键 词：微波介质陶瓷 BaZn0.33Nb0.67O3-Ba3CoNb2O9(BCZN) Zn缺位 Ba8CoNb6O24 

分 类 号：TN384[电子电信—物理电子学] TM28[一般工业技术—材料科学与工程]