Charge recombination mechanism to explain the negative capacitance in dye-sensitized solar cells  

作　　者：冯列峰 赵昆 戴海涛 王树国 孙小卫 

机构地区：[1]Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Faculty of Science, Tianjin University

出　　处：《Chinese Physics B》2016年第3期366-370,共5页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.11204209 and 60876035);the Natural Science Foundation of Tianjin City,China(Grant No.13JCZDJC32800)

摘　　要：Negative capacitance （NC） in dye-sensitized solar cells （DSCs） has been confirmed experimentally. In this work, the recombination behavior of carriers in DSC with semiconductor interface as a carder＇s transport layer is explored theoreti- cally in detail. Analytical results indicate that the recombination behavior of carriers could contribute to the NC of DSCs under small signal perturbation. Using this recombination capacitance we propose a novel equivalent circuit to completely explain the negative terminal capacitance. Further analysis based on the recombination complex impedance show that the NC is inversely proportional to frequency. In addition, analytical recombination resistance is composed by the alternating current （AC） recombination resistance （Rrac） and the direct current （DC） recombination resistance （Rrdc）, which are caused by small-signal perturbation and the DC bias voltage, respectively. Both of two parts will decrease with increasing bias voltage.Negative capacitance （NC） in dye-sensitized solar cells （DSCs） has been confirmed experimentally. In this work, the recombination behavior of carriers in DSC with semiconductor interface as a carder＇s transport layer is explored theoreti- cally in detail. Analytical results indicate that the recombination behavior of carriers could contribute to the NC of DSCs under small signal perturbation. Using this recombination capacitance we propose a novel equivalent circuit to completely explain the negative terminal capacitance. Further analysis based on the recombination complex impedance show that the NC is inversely proportional to frequency. In addition, analytical recombination resistance is composed by the alternating current （AC） recombination resistance （Rrac） and the direct current （DC） recombination resistance （Rrdc）, which are caused by small-signal perturbation and the DC bias voltage, respectively. Both of two parts will decrease with increasing bias voltage.

关 键 词：dye-sensitized solar-cells （DSCs） negative capacitance （NC） small-signal perturbation carrier＇stransport 

分 类 号：TM914.4[电气工程—电力电子与电力传动] TN312.8[电子电信—物理电子学]