Growth mechanism of atomic-layer-deposited TiAlC metal gate based on TiCl4 and TMA precursors  

作　　者：项金娟 丁玉强 杜立永 李俊峰 王文武 赵超 

机构地区：[1]Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China [2]Chemical and Material Engineering, Jiangnan University, Wuxi 214122, China

出　　处：《Chinese Physics B》2016年第3期371-374,共4页中国物理B（英文版）

基　　金：Project supported by the Key Technology Study for 16/14 nm Program of the Ministry of Science and Technology of China(Grant No.2013ZX02303)

摘　　要：TiAIC metal gate for the metal-oxide-semiconductor field-effect-transistor （MOSFET） is grown by the atorr/ic layer deposition method using TiCI4 and AI（CH3） 3 （TMA） as precursors. It is found that the major PrOduct of the TIC14 and TMA reaction is TiA1C, and the components of C and A1 are found to increase with higher growth temperature. The reaction mechanism is investigated by using x-ray photoemission spectroscopy （XPS）, Fourier transform infrared spectroscopy （FFIR）, and scanning electron microscope （SEM）. The reaction mechanism is as follows. Ti is generated through the reduction of TiCI4 by TMA. The reductive behavior of TMA involves the formation of ethane. The Ti from the reduction of TIC14 by TMA reacts with ethane easily forming heterogenetic TiCH2, TiCH=CH2 and TiC fragments. In addition, TMA thermally decomposes, driving A1 into the TiC film and leading to TiA1C formation. With the growth temperature increasing, TMA decomposes more severely, resulting in more C and A1 in the TiA1C film. Thus, the film composition can be controlled by the growth temperature to a certain extent.TiAIC metal gate for the metal-oxide-semiconductor field-effect-transistor （MOSFET） is grown by the atorr/ic layer deposition method using TiCI4 and AI（CH3） 3 （TMA） as precursors. It is found that the major PrOduct of the TIC14 and TMA reaction is TiA1C, and the components of C and A1 are found to increase with higher growth temperature. The reaction mechanism is investigated by using x-ray photoemission spectroscopy （XPS）, Fourier transform infrared spectroscopy （FFIR）, and scanning electron microscope （SEM）. The reaction mechanism is as follows. Ti is generated through the reduction of TiCI4 by TMA. The reductive behavior of TMA involves the formation of ethane. The Ti from the reduction of TIC14 by TMA reacts with ethane easily forming heterogenetic TiCH2, TiCH=CH2 and TiC fragments. In addition, TMA thermally decomposes, driving A1 into the TiC film and leading to TiA1C formation. With the growth temperature increasing, TMA decomposes more severely, resulting in more C and A1 in the TiA1C film. Thus, the film composition can be controlled by the growth temperature to a certain extent.

关 键 词：atomic layer deposition metal gate TiAIC reaction mechanism 

分 类 号：TN386[电子电信—物理电子学]