Two-dimensional models of threshold voltage and subthreshold current for symmetrical double-material double-gate strained Si MOSFETs  

作　　者：辛艳辉 袁胜 刘明堂 刘红侠 袁合才 

机构地区：[1]Department of Information and Engineering, North China University of Water Resources and Electric Power [2]Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education,School of Microelectronics, Xidian University [3]Department of Mathematics and Information Science, North China University of Water Resources and Electric Power

出　　处：《Chinese Physics B》2016年第3期440-444,共5页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.61376099,11235008,and 61205003)

摘　　要：The two-dimensional models for symmetrical double-material double-gate （DM-DG） strained Si （s-Si） metal-oxide semiconductor field effect transistors （MOSFETs） are presented. The surface potential and the surface electric field ex- pressions have been obtained by solving Poisson＇s equation. The models of threshold voltage and subthreshold current are obtained based on the surface potential expression. The surface potential and the surface electric field are compared with those of single-material double-gate （SM-DG） MOSFETs. The effects of different device parameters on the threshold voltage and the subthreshold current are demonstrated. The analytical models give deep insight into the device parameters design. The analytical results obtained from the proposed models show good matching with the simulation results using DESSIS.The two-dimensional models for symmetrical double-material double-gate （DM-DG） strained Si （s-Si） metal-oxide semiconductor field effect transistors （MOSFETs） are presented. The surface potential and the surface electric field ex- pressions have been obtained by solving Poisson＇s equation. The models of threshold voltage and subthreshold current are obtained based on the surface potential expression. The surface potential and the surface electric field are compared with those of single-material double-gate （SM-DG） MOSFETs. The effects of different device parameters on the threshold voltage and the subthreshold current are demonstrated. The analytical models give deep insight into the device parameters design. The analytical results obtained from the proposed models show good matching with the simulation results using DESSIS.

关 键 词：double-material double-gate MOSFET strained Si threshold voltage subthreshold current 

分 类 号：TN386[电子电信—物理电子学]