Evaluation of a gate-first process for AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with low ohmic annealing temperature  

作　　者：李柳暗 张家琦 刘扬 敖金平 

机构地区：[1]School of Microelectronics, Sun Yat-Sen University, Guangzhou 510275, China [2]Institute of Technology and Science, Tokushima University, Tokushima 770-8506, Japan

出　　处：《Chinese Physics B》2016年第3期445-447,共3页中国物理B（英文版）

基　　金：Project supported by the International Science and Technology Collaboration Program of China(Grant No.2012DFG52260)

摘　　要：In this paper, TiN/A1Ox gated A1GaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors （MOS- HFETs） were fabricated for gate-first process evaluation. By employing a low temperature ohmic process, ohmic contact can be obtained by annealing at 600 ℃ with the contact resistance approximately 1.6 Ω.mm. The ohmic annealing process also acts as a post-deposition annealing on the oxide film, resulting in good device performance. Those results demonstrated that the TiN/A1Ox gated MOS-HFETs with low temperature ohmic process can be applied for self-aligned gate AIGaN/GaN MOS-HFETs.In this paper, TiN/A1Ox gated A1GaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors （MOS- HFETs） were fabricated for gate-first process evaluation. By employing a low temperature ohmic process, ohmic contact can be obtained by annealing at 600 ℃ with the contact resistance approximately 1.6 Ω.mm. The ohmic annealing process also acts as a post-deposition annealing on the oxide film, resulting in good device performance. Those results demonstrated that the TiN/A1Ox gated MOS-HFETs with low temperature ohmic process can be applied for self-aligned gate AIGaN/GaN MOS-HFETs.

关 键 词：metal-oxide-semiconductor heterostructure field-effect transistors low temperature ohmic pro-cess inductively coupled plasma 

分 类 号：TN386[电子电信—物理电子学]