Design and fabrication of multi-channel photodetector array monolithic with arrayed waveguide grating  被引量:1

Design and fabrication of multi-channel photodetector array monolithic with arrayed waveguide grating

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作  者:吕倩倩 潘盼 叶焓 尹冬冬 王玉冰 杨晓红 韩勤 

机构地区:[1]State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science

出  处:《Chinese Physics B》2016年第3期453-457,共5页中国物理B(英文版)

基  金:Project supported by the National High Technology Research and Development Program of China(Grant Nos.2013AA031401,2015AA016902,and 2015AA016904);the National Natural Science Foundation of China(Grant Nos.61176053,61274069,and 61435002);the National Basic Research Program of China(Grant Nos.2012CB933503 and 2013CB932904)

摘  要:We have provided optical simulations of the evanescently coupled waveguide photodiodes integrated with a 13- channels AWGs. The photodiode could exhibit high internal efficiency by appropriate choice of layers geometry and refrac- tive index. Aseamless joint structure has been designed and fabricated for integrating the output waveguides of AWGs with the evanescently coupled waveguide photodiode array. The highest simulation quantum efficiency could achieve 92% when the matching layer thickfiess of the PD is 120 nm and the insertion length is 2 μm. The fabricated PD with 320-nm-thick match.ing layer and 2-μm-length insertion matching layer present a responsivity of 0.87 A/W.We have provided optical simulations of the evanescently coupled waveguide photodiodes integrated with a 13- channels AWGs. The photodiode could exhibit high internal efficiency by appropriate choice of layers geometry and refrac- tive index. Aseamless joint structure has been designed and fabricated for integrating the output waveguides of AWGs with the evanescently coupled waveguide photodiode array. The highest simulation quantum efficiency could achieve 92% when the matching layer thickfiess of the PD is 120 nm and the insertion length is 2 μm. The fabricated PD with 320-nm-thick match.ing layer and 2-μm-length insertion matching layer present a responsivity of 0.87 A/W.

关 键 词:photodetector array MONOLITHIC evanescent coupling arrayed waveguide grating 

分 类 号:TN312[电子电信—物理电子学]

 

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