Comprehensive and fully self-consistent modeling of modern semiconductor lasers  

作　　者：W.Nakwaski R.P.Sarza?a 

机构地区：[1]Photonics Group, Institute of Physics, Lodz University of Technology

出　　处：《Journal of Semiconductors》2016年第2期45-56,共12页半导体学报（英文版）

基　　金：the partial support from the Polish National Science Centre (2014/13/B/ST7/00633)

摘　　要：The fully self-consistent model of modern semiconductor lasers used to design their advanced structures and to understand more deeply their properties is given in the present paper. Operation of semiconductor lasers de- pends not only on many optical, electrical, thermal, recombination, and sometimes mechanical phenomena taking place within their volumes but also on numerous mutual interactions between these phenomena. Their experimental investigation is quite complex, mostly because of miniature device sizes. Therefore, the most convenient and exact method to analyze expected laser operation and to determine laser optimal structures for various applications is to examine the details of their performance with the aid of a simulation of laser operation in various considered condi- tions. Such a simulation of an operation of semiconductor lasers is presented in this paper in a full complexity of all mutual interactions between the above individual physical processes. In particular, the hole-buming effect has been discussed. The impacts on laser performance introduced by oxide apertures （their sizes and localization） have been analyzed in detail. Also, some important details concerning the operation of various types of semiconductor lasers are discussed. The results of some applications of semiconductor lasers are shown for successive laser structures.The fully self-consistent model of modern semiconductor lasers used to design their advanced structures and to understand more deeply their properties is given in the present paper. Operation of semiconductor lasers de- pends not only on many optical, electrical, thermal, recombination, and sometimes mechanical phenomena taking place within their volumes but also on numerous mutual interactions between these phenomena. Their experimental investigation is quite complex, mostly because of miniature device sizes. Therefore, the most convenient and exact method to analyze expected laser operation and to determine laser optimal structures for various applications is to examine the details of their performance with the aid of a simulation of laser operation in various considered condi- tions. Such a simulation of an operation of semiconductor lasers is presented in this paper in a full complexity of all mutual interactions between the above individual physical processes. In particular, the hole-buming effect has been discussed. The impacts on laser performance introduced by oxide apertures （their sizes and localization） have been analyzed in detail. Also, some important details concerning the operation of various types of semiconductor lasers are discussed. The results of some applications of semiconductor lasers are shown for successive laser structures.

关 键 词：semiconductor lasers simulation model EEL VCSEL VECSEL DBF QCL 

分 类 号：TN248.4[电子电信—物理电子学] O462[理学—电子物理学]