A threshold-voltage model for small-scaled GaAs nMOSFET with stacked high-k gate dielectric  

作　　者：刘超文 徐静平 刘璐 卢汉汉 黄苑 

机构地区：[1]School of Optical and Electronic Information, Huazhong University of Science and Technology

出　　处：《Journal of Semiconductors》2016年第2期71-76,共6页半导体学报（英文版）

基　　金：supported by the National Natural Science Foundation of China(No.61176100)

摘　　要：A threshold-voltage model for a stacked high-k gate dielectric GaAs MOSFET is established by solving a two-dimensional Poisson＇s equation in channel and considering the short-channel, DIBL and quantum effects. The simulated results are in good agreement with the Silvaco TCAD data, confirming the correctness and validity of the model. Using the model, impacts of structural and physical parameters of the stack high-k gate dielectric on the threshold-voltage shift and the temperature characteristics of the threshold voltage are investigated. The results show that the stacked gate dielectric structure can effectively suppress the fringing-field and DIBL effects and improve the threshold and temperature characteristics, and on the other hand, the influence of temperature on the threshold voltage is overestimated if the quantum effect is ignored.A threshold-voltage model for a stacked high-k gate dielectric GaAs MOSFET is established by solving a two-dimensional Poisson＇s equation in channel and considering the short-channel, DIBL and quantum effects. The simulated results are in good agreement with the Silvaco TCAD data, confirming the correctness and validity of the model. Using the model, impacts of structural and physical parameters of the stack high-k gate dielectric on the threshold-voltage shift and the temperature characteristics of the threshold voltage are investigated. The results show that the stacked gate dielectric structure can effectively suppress the fringing-field and DIBL effects and improve the threshold and temperature characteristics, and on the other hand, the influence of temperature on the threshold voltage is overestimated if the quantum effect is ignored.

关 键 词：GaAs MOSFET threshold voltage stack high-k gate dielectric quantum effect 

分 类 号：TN386[电子电信—物理电子学]