70-nm-gated InAlN/GaN HEMTs grown on SiC substrate with f_T/f_(max)>160GHz  

作　　者：韩婷婷 敦少博 吕元杰 顾国栋 宋旭波 王元刚 徐鹏 冯志红 

机构地区：[1]National Key Laboratory of ASIC,Hebei Semiconductor Research Institute,Shijiazhuang 050051,China [2]Hebei Semiconductor Research Institute,Shijiazhuang 050051,China

出　　处：《Journal of Semiconductors》2016年第2期86-89,共4页半导体学报（英文版）

基　　金：supported by the National Natural Science Foundation of China(No.61306113)

摘　　要：lnA1N/GaN high-electron-mobility transistors （HEMTs） on SiC substrate were fabricated and character- ized. Several techniques, consisting of high electron density, 70 nm T-shaped gate, low ohmic contacts and a short drain-source distance, are integrated to gain high device performance. The fabricated InA1N/GaN HEMTs exhibit a maximum drain saturation current density of 1.65 A/ram at Vgs = 1 V and a maximum peak transconductance of 382 mS/rnm. In addition, a unity current gain cut-off frequency （fT） of 162 GHz and a maximum oscillation frequency （fmax） of 176 GHz are achieved on the devices with the 70 nm gate length.lnA1N/GaN high-electron-mobility transistors （HEMTs） on SiC substrate were fabricated and character- ized. Several techniques, consisting of high electron density, 70 nm T-shaped gate, low ohmic contacts and a short drain-source distance, are integrated to gain high device performance. The fabricated InA1N/GaN HEMTs exhibit a maximum drain saturation current density of 1.65 A/ram at Vgs = 1 V and a maximum peak transconductance of 382 mS/rnm. In addition, a unity current gain cut-off frequency （fT） of 162 GHz and a maximum oscillation frequency （fmax） of 176 GHz are achieved on the devices with the 70 nm gate length.

关 键 词：InA1N/GaN high-electron-mobility transistors （HEMTs） T-shaped gate current gain cut-off fre-quency （fT） maximum oscillation frequency （fmax） 

分 类 号：TN386[电子电信—物理电子学] TP332[自动化与计算机技术—计算机系统结构]