Simulation study on single event burnout in linear doping buffer layer engineered power VDMOSFET  

作　　者：贾云鹏 苏洪源 金锐 胡冬青 吴郁 

机构地区：[1]Power semiconductor and power integrated circuit laboratory, College of Electronic Information and Control Engineering,Beijing University of Technology [2]New Electrical Materials and Microelectronics Institute,State Grid Smart Electrical Engineering

出　　处：《Journal of Semiconductors》2016年第2期90-93,共4页半导体学报（英文版）

基　　金：supported by the National Natural Science Foundation of China(No.61176071);the Doctoral Fund of Ministry of Education of China(No.20111103120016);the Science and Technology Program of State Grid Corporation of China(No.SGRI-WD-71-13-006)

摘　　要：The addition of a buffer layer can improve the device＇s secondary breakdown voltage, thus, improving the single event burnout （SEB） threshold voltage. In this paper, an N type linear doping buffer layer is proposed. According to quasi-stationary avalanche simulation and heavy ion beam simulation, the results show that an op- timized linear doping buffer layer is critical. As SEB is induced by heavy ions impacting, the electric field of an optimized linear doping buffer device is much lower than that with an optimized constant doping buffer layer at a given buffer layer thickness and the same biasing voltages. Secondary breakdown voltage and the parasitic bipolar turn-on current are much higher than those with the optimized constant doping buffer ~ayer. So the linear buffer layer is more advantageous to improving the device＇s SEB performance.The addition of a buffer layer can improve the device＇s secondary breakdown voltage, thus, improving the single event burnout （SEB） threshold voltage. In this paper, an N type linear doping buffer layer is proposed. According to quasi-stationary avalanche simulation and heavy ion beam simulation, the results show that an op- timized linear doping buffer layer is critical. As SEB is induced by heavy ions impacting, the electric field of an optimized linear doping buffer device is much lower than that with an optimized constant doping buffer layer at a given buffer layer thickness and the same biasing voltages. Secondary breakdown voltage and the parasitic bipolar turn-on current are much higher than those with the optimized constant doping buffer ~ayer. So the linear buffer layer is more advantageous to improving the device＇s SEB performance.

关 键 词：single event burnout （SEB） quasi-static avalanche linear doping buffer layer heavy ion Au beam 

分 类 号：TN386[电子电信—物理电子学] TN304.23